&lt;title&gt;Vertical cavity surface emitting lasers for spaceborne photonic interconnects&lt;/title&gt;

Morgan, Robert; Bristow, Julian P. G.; Hibbs‐Brenner, Mary K.; Nohava, J.C.; Bounnak, Sommy; Marta, Terry; Lehman, John A.; Liu, Yue

doi:10.1117/12.254041

Cited by 9 publications

(5 citation statements)

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“…Their light output was less affected than light emitting diodes. [8] Taylor et al [9] and Schöne et al[1O] also reported on the effects of 4.5 MeV proton radiation on 780 nm implanted VCSELs. Here, the effect of carrier removal and creation of nonradiative recombination were found to differ from edge-emitting laser diodes.…”

Section: Introductionmentioning

confidence: 95%

“…[7J This approach is extremely interesting for applications in radiation environments since photodetectors are known to show a considerable radiation sensitivity, whereas recent radiation experiments on VCSELS indicated their good radiation hardness. [8][9][10][11][12][13] Morgan et al [8] first reported on neutron irradiation of VCSELS. Their light output was less affected than light emitting diodes.…”

Section: Introductionmentioning

confidence: 99%

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Preliminary results on high-total-dose testing of semiconductor photonic sources: a comparison of VCSELs and resonant-cavity LEDs

et al. 1998

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Low-power consumption, high efficiency and high bandwidth surface emitting semiconductor optical sources are critical elements in the development of future photonic systems for space and civil nuclear applications. In this paper, we report on preliminary high total dose experiments performed on two types of recently developed microcavity emitters : VCSELs and microcavity (or resonant cavity) LEDs. We gamma irradiated a total of twelve commercially available packaged VCSELs and two home-made flip-chipped 2x2 microcavity LED arrays. For doses between 5.106 Gy and 1.3•1O Gy the VCSELs show a threshold current increase lower than 20 % and an output power decrease lower than 10 %. These values are even smaller if the VCSEL is operated at a higher temperature. At a dose of 3. 14 iO Gy, one VCSEL still showed satisfactory operation. The niicrocavity LEDs suffered from a burn-in after radiation but recovered quickly when biased. Their output power decrease is comparable to that of the VCSELS, while their quantum efficiency is not much affected. The specifications of both types of devices are not substantially altered by high gamma doses and can therefore be considered for application in enhanced radiation environments.

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Preliminary results on high-total-dose testing of semiconductor photonic sources: a comparison of VCSELs and resonant-cavity LEDs

et al. 1998

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“…In addition, VCSELs have proven to be excellent candidates as optical sources for optical communication links in high-energy physics experiments 7 . Morgan et al 8 first reported on neutron irradiation of VCSELs. Their light output was less affected than light emitting diodes.…”

Section: Background On Radiation Effects On Vcselsmentioning

confidence: 98%

High-total-dose gamma and neutron radiation tolerance of VCSEL assemblies

Berghmans

Uffelen

Decréton

2002

Photonics for Space Environments VIII

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Optical fiber technology is seriously considered for communication and monitoring applications during the operation and maintenance of future thermonuclear fusion reactors. Their environment is characterized, in particular, by possibly high gamma dose-rates and total doses in excess of 10 MGy. In addition, the maintenance equipment might be stored in close vicinity of the reactor during its operation and therefore the communication devices might also be exposed to a substantial neutron fluence. The feasibility of applying photonic technology in these radiation fields therefore needs to be assessed. Whereas many reports deal with the radiation behavior of a variety of fiber-optic devices, only little information is available on the radiation tolerance at high total dose (e.g. > 1 MGy). We describe our recent results obtained on vertical-cavity surface-emitting laser (VCSEL) assemblies. We have conducted high total dose (up to 20 MGy) irradiation experiments on such devices, which confirmed their excellent gamma radiation hardness. The optical power loss at nominal forward current was less than 2 dB and the threshold current remained unaltered. We have also irradiated these devices with neutrons inside the BR1 reactor (SCK•CEN, Mol, Belgium) up to a total fluence on the order of 10 15 n·cm -2 . The response of VCSELs to neutrons is, as expected, different from that to gamma radiation. VCSELs previously exposed to gamma rays exhibited an accelerated degradation under neutron radiation compared to not pre-irradiated devices. The beneficial effect of applying a continuous forward bias to the VCSELs is also evidenced.

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“…Such vertical emitters offer well-known advantages in comparison to conventional edgeemitting laser diodes such as better output beam characteristics resulting in more efficient coupling to optical fibers and easy packaging. Additional advantages include a controllable active layer thickness resulting in single longitudinal-mode operation, possible single transverse-mode operation, low-threshold current, and high-temperature operation [10].…”

Section: A Vcselsmentioning

confidence: 99%

Design and characterization of a radiation-tolerant optical transmitter using discrete COTS bipolar transistors and VCSELs

Berghmans

Embrechts²,

Uffelen

et al. 2002

IEEE Trans. Nucl. Sci.

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In this paper, we design and test a radiation-tolerant opto-electronic transmitter based on vertical-cavity surface-emitting lasers (VCSELs) and dedicated driver electronics consisting of discrete components. VCSELs have already demonstrated their good radiation tolerance level. We confirm this by on-line irradiation experiments on such devices up to a 10-MGy total dose. For the design of the driver circuit, we rely on discrete commercial-off-the-shelf (COTS) bipolar transistors. When the radiation induced degradation of these components is considered within the design of the circuits, total dose levels larger than 1 MGy can be tolerated. The driver uses standard Transistor-Transistor Logic TTL input signals and delivers a forward current of 12 mA to a pigtailed 840-nm VCSEL. SPICE simulations show that the driver still delivers a sufficient forward current to the VCSEL in spite of the radiation induced degradation of the FE and CESat values of the transistors. These simulations are verified by our experiments. At a total dose of 1 MGy, the measured decrease of the forward current is only about 8%, as measured for three driver circuits. This induces an optical output power decrease that can still be tolerated with irradiated VCSELs, as shown by our experiments. We conclude that a high total dose hardened optical transmitter for use in nuclear instrumentation systems can be fabricated using discrete COTS bipolar transistors, COTS vertical-cavity surface-emitting lasers, and COTS optical fiber.

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<title>Vertical cavity surface emitting lasers for spaceborne photonic interconnects</title>

Cited by 9 publications

References 0 publications

Preliminary results on high-total-dose testing of semiconductor photonic sources: a comparison of VCSELs and resonant-cavity LEDs

Preliminary results on high-total-dose testing of semiconductor photonic sources: a comparison of VCSELs and resonant-cavity LEDs

High-total-dose gamma and neutron radiation tolerance of VCSEL assemblies

Design and characterization of a radiation-tolerant optical transmitter using discrete COTS bipolar transistors and VCSELs

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