Abstract:An image sensor with lateral antiblooming for overillumination protection is discussed. The device is implemented using a double poly, NMOS buried channel CCD process with a buried drain that runs adjacent to the channel stops. The antiblooming barrier is formed by a surface channel region adjacent to the buried drain. Typically these devices are implemented using a three poly process but by eliminating the exposure control requirement, a two poly process technology can be used. The area array pixels are built… Show more
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