&lt;title&gt;Transient temperature behavior of GaAlAs/GaAs high-power laser arrays on different heat sinks&lt;/title&gt;

Puchert, R.; Voß, M.; Lier, Ch.; Baerwolff, A.

doi:10.1117/12.264167

Cited by 4 publications

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“…(1) (2) With these assumptions, the temperature increases with the square root of time, and at a given time is inversely proportional to (@pK) 1'2 which we take as the figure of merit (FOM) for a heatsink material. Since the heat flux is inversely proportional to the thermal footprint, we see that the diode cavity length, an important parameter that affects output performance and cost, also impacts the temperature rise for a given heatsink.…”

Section: Descriptionmentioning

confidence: 99%

Modeling the effect of heatsink performance on high-peak-power laser-diode-bar pump sources for solid state lasers

Honea

Skidmore

Freitas

et al. 1998

Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III

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We derive approximate expressions for transient output power and wavelength chirp of highpeak-power laser-diode bars assuming one-dimensional heat flow and linear temperature dependences for chirp and efficiency. The model is derived for pulse durations, 10 < 7 < 1000 ps, typically used for diode-pumped solid-state lasers and is in good agreement with experimental data for Si heatsink mounted 940 nm laser-diode bars operating at 100 W/cm. The analytic expressions are more flexible and easily used than the results of operating point dependent numerical modeling.In addition, the.analytic expressions used here can be integrated to describe the energy per unit wavelength for a given pulse duration, initial emission bandwidth and heatsink material. We find that the figure-

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Section: Descriptionmentioning

confidence: 99%

Modeling the effect of heatsink performance on high-peak-power laser-diode-bar pump sources for solid state lasers

Honea

Skidmore

Freitas

et al. 1998

Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III

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High-Power Broad-Area Diode Lasers and Laser Bars

Erbert

Bärwolff

Sebastian

et al.

Topics in Applied Physics

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High-power diode laser bars with 19 up to 48 individually addressable emitters

et al. 2003

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The main challenge to address single emitters in a high-power diode-laser-bar is the thermal and electrical management to avoid crosstalking. Especially p-side up assembly leads to increasing thermal influence of neighboring emitters due to the low thermal conductivity of GaAs. Electro-magnetic fields inside and outside the laser-bar, for example caused by high frequency modulation (10 MHz) at a high current (up to 1 A), induce voltages into neighboring electrical circuits, hence the output power of neighboring emitters can be affected.

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<title>Transient temperature behavior of GaAlAs/GaAs high-power laser arrays on different heat sinks</title>

Cited by 4 publications

References 0 publications

Modeling the effect of heatsink performance on high-peak-power laser-diode-bar pump sources for solid state lasers

Modeling the effect of heatsink performance on high-peak-power laser-diode-bar pump sources for solid state lasers

High-Power Broad-Area Diode Lasers and Laser Bars

High-power diode laser bars with 19 up to 48 individually addressable emitters

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