&lt;title&gt;Stress-induced warpage and the compensation in a composite microaccelerometer&lt;/title&gt;

Li, Gary X.; Gutteridge, R.; Koury, D.; Zhang, Zhenjun; Roop, Ray

doi:10.1117/12.250697

Cited by 3 publications

(1 citation statement)

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“…Parasitic capacitance to the substrate adds approximately 0.37, 0.4, and 0.6 pF to the overall designed capacitance of the 0.57, 1.0, and 2.0 pF tunable capacitors, respectively. Furthermore, residual stress in the polysilicon plates produces warping of the capacitor plates, which effectively results in a different capacitor plate separation and, thus, a different parallel-plate capacitance [21]. Fig.…”

Section: A Residual Stressmentioning

confidence: 99%

Micromachined electro-mechanically tunable capacitors and their applications to RF IC's

Dec

Suyama

1998

IEEE Trans. Microwave Theory Techn.

220

113

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Micromachined electro-mechanically tunable capacitors with two and three parallel plates are presented. Experimental devices have been fabricated using a standard polysilicon surface micromachining process. The two-plate tunable capacitor has a measured nominal capacitance of 2.05 pF, a Q-factor of 20 at 1 GHz, and achieves a tuning range of 1.5 : 1. The threeplate version has a nominal capacitance of 4.0 pF, a Q-factor of 15.4 at 1 GHz, and a tuning range of 1.87 : 1. The tuning ranges achieved here are near theoretical limits. Effects due to various physical phenomena such as temperature, gravity, and shock are examined in detail. An RF voltage-controlled oscillator with an integrated inductor and a micromachined tunable capacitor is also demonstrated. The active circuit and the inductor have been fabricated in a 0.5-m CMOS process. The voltage-controlled oscillator has been assembled by bonding together the CMOS and the micromachined parts. The 1.35-GHz voltage-controlled oscillator has a phase noise of 098.5 dBc/Hz at a 100 kHz offset from the carrier.

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Section: A Residual Stressmentioning

confidence: 99%

Micromachined electro-mechanically tunable capacitors and their applications to RF IC's

Dec

Suyama

1998

IEEE Trans. Microwave Theory Techn.

220

113

View full text Add to dashboard Cite

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Packaging of Advanced Micro‐ and Nanosystems

Bright

Stoldt

Monk

et al. 2004

Advanced Micro and Nanosystems

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Smart materials and structures - a finite-element approach: a bibliography (1986-1997)

Mackerle

1998

Modelling Simul. Mater. Sci. Eng.

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This paper gives a bibliographical review of the finite-element methods (FEMs) applied to the analysis and simulation of smart materials and structures. The bibliography at the end of the paper contains references to papers, conference proceedings and theses/dissertations on the subject that were published between 1986-1997. The following topics are included: smart materials; smart components/structures; smart sensors and actuators; controlled structures technology; and other topics.category alphabetically according to the first author's name. If a specific paper is relevant for several subject categories, the same reference can be listed under the respective section headings.

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<title>Stress-induced warpage and the compensation in a composite microaccelerometer</title>

Cited by 3 publications

References 0 publications

Micromachined electro-mechanically tunable capacitors and their applications to RF IC's

Micromachined electro-mechanically tunable capacitors and their applications to RF IC's

Packaging of Advanced Micro‐ and Nanosystems

Smart materials and structures - a finite-element approach: a bibliography (1986-1997)

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