&lt;title&gt;Room temperature 640x512 pixel near-infrared InGaAs focal plane array&lt;/title&gt;

Ettenberg, M.; Lange, Michael; O'Grady, Matthew T.; Vermaak, J. S.; Cohen, Melvin R.; Olsen, G.H.

doi:10.1117/12.391733

Cited by 16 publications

(5 citation statements)

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“…The largest and finest pitched imager in In 0.53 Ga 0.47 As material system has been demonstrated recently [125]. The 640 × 512 FPAs with 25 µm pixels is sensitive to the 0.9-1.7 µm and features a room temperature detectivity greater than 5 × 10 12 cm Hz 1/2 W −1 with greater than 98% of the pixels operable.…”

Section: Insb and Ingaasmentioning

confidence: 99%

HgCdTe infrared detector material: history, status and outlook

2005

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This article reviews the history, the present status and possible future developments of HgCdTe ternary alloy for infrared (IR) detector applications. HgCdTe IR detectors have been intensively developed since the first synthesis of this material in 1958. This article summarizes the fundamental properties of this versatile narrow gap semiconductor, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasis is put on key developments in the crystal growth and their influence on device evolution. Competitive technologies to HgCdTe ternary alloy are also presented.Recent advances of backside illuminated HgCdTe heterojunction photodiodes have enabled a third generation of multispectral instruments for remote sensing applications and have led to the practicality of multiband IR focal plane array technology. Finally, evaluation of HgCdTe for room temperature long wavelength IR applications is presented.

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Section: Insb and Ingaasmentioning

confidence: 99%

HgCdTe infrared detector material: history, status and outlook

2005

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“…The statistical properties are used to determine the sensor's SNR and give an indication of sensitivity uniformity across the FPA. Ettenberg et al 3 describes D* measurements of a room temperature InGaAs camera using a blackbody source with narrowband filters.…”

Section: Noise Equivalent Power and Detectivity Measurementsmentioning

confidence: 99%

Measuring noise equivalent irradiance of a digital short-wave infrared imaging system using a broadband source to simulate the night spectrum

Green¹,

Robinson

2015

SPIE Proceedings

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There is a growing interest in developing helmet-mounted digital imaging systems (HMDIS) for integration into military aircraft cockpits. This interest stems from the multiple advantages of digital vs. analog imaging such as image fusion from multiple sensors, data processing to enhance the image contrast, superposition of non-imaging data over the image, and sending images to remote location for analysis.There are several properties an HMDIS must have in order to aid the pilot during night operations. In addition to the resolution, image refresh rate, dynamic range, and sensor uniformity over the entire Focal Plane Array (FPA); the imaging system must have the sensitivity to detect the limited night light available filtered through cockpit transparencies. Digital sensor sensitivity is generally measured monochromatically using a laser with a wavelength near the peak detector quantum efficiency, and is generally reported as either the Noise Equivalent Power (NEP) or Noise Equivalent Irradiance (NEI).This paper proposes a test system that measures NEI of Short-Wave Infrared (SWIR) digital imaging systems using a broadband source that simulates the night spectrum. This method has a few advantages over a monochromatic method. Namely, the test conditions provide spectrum closer to what is experienced by the end-user, and the resulting NEI may be compared directly to modeled night glow irradiance calculation. This comparison may be used to assess the Technology Readiness Level of the imaging system for the application. The test system is being developed under a Cooperative Research and Development Agreement (CRADA) with the Air Force Research Laboratory.

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“…In0.53Ga0.47As alloy (Eg = 0.73 eV) lattice matched to the InP substrate has been shown to be a suitable detector material for NIR (1.0-1.7 μm) spectral range compared to HgCdTe and InSb. Having lower dark current and noise than indirect-bandgap germanium, InGaAs is addressing both entrenched applications including lightwave communication systems, low light-level night vision, and new applications such as remote sensing: eyesafe range finding and process control [25][26][27][28][29][30][31][32][33]. InGaAs photodiodes have shown high device per absorption layer.…”

Section: Iii-v Alloy-based Irpdmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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<title>Room temperature 640x512 pixel near-infrared InGaAs focal plane array</title>

Cited by 16 publications

References 0 publications

HgCdTe infrared detector material: history, status and outlook

HgCdTe infrared detector material: history, status and outlook

Measuring noise equivalent irradiance of a digital short-wave infrared imaging system using a broadband source to simulate the night spectrum

Emerging technologies for high performance infrared detectors

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