1997
DOI: 10.1117/12.274415
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<title>Processing parameter optimization for thermochemical writing of DOEs on chromium films</title>

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Cited by 24 publications
(12 citation statements)
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“…As it is clear from the aforesaid, the author's (see, e.g., [1][2][3][4][5]) and other researchers' [6][7][8][9][10] experience demonstrates that the main reason for the selectivity of chromium etching under the normal conditions is its oxidation to give the most stable oxide Cr 2 O 3 . Therefore, efforts were made to confirm the presence of this oxide presence in a study of the structure and composition of irradiated Cr films [38].…”
Section: Effect Of Short Pulse Lasers: Oxidation Plus Structural Modimentioning
confidence: 97%
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“…As it is clear from the aforesaid, the author's (see, e.g., [1][2][3][4][5]) and other researchers' [6][7][8][9][10] experience demonstrates that the main reason for the selectivity of chromium etching under the normal conditions is its oxidation to give the most stable oxide Cr 2 O 3 . Therefore, efforts were made to confirm the presence of this oxide presence in a study of the structure and composition of irradiated Cr films [38].…”
Section: Effect Of Short Pulse Lasers: Oxidation Plus Structural Modimentioning
confidence: 97%
“…The writing errors of the CGH structure of these two DOEs were within 50 nm, as verified by the methods described in [7]. The maximum wavefront error was under λ/15-λ/20.…”
Section: Application Of Doe For Aspheric Optics Testingmentioning
confidence: 99%
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