&lt;title&gt;Optimization of optical properties for single-layer halftone masks&lt;/title&gt;

Ito, Shin‐ichi; Hazama, H.; Kamo, Takashi; Miyazaki, Hisao; Sato, Hiroyuki; Hayashi, Kenji; Shigemitsu, Fumiaki; Mori, Ikue

doi:10.1117/12.175486

Cited by 9 publications

(4 citation statements)

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“…The PSM film is deposited on a transparent substrate, such as quartz, and subsequently written by a line and space pattern [7,8,14], so that the physical model for the SLHTPSM can be designed as shown in figure 2. The basic requirements for this system are: (i) and (n a , k a ), are for the substrate, single-layer phaseshifting film and air respectively.…”

Section: Physical Modelmentioning

confidence: 99%

“…Full derivations of the matrix formulation have been presented in numerous publications, the better treatments, however, are included in [15] and [16]. A further development of the matrix theory for a multilayer thin film system was carried out to derive a matrix formulation which is suitable for the SLHTPSM system as described in figure 2 [14,16]. The amplitude of transmission coefficients is given by…”

Section: Matrix Approachmentioning

confidence: 99%

“…In this circumstance, the system simulation is extremely important and helpful for finding suitable combinations of the optical properties. In 1994, Ito and co-workers [14] reported the optimum optical properties of a single-layer halftone mask and provided some optimum conditions for the refractive index (n), extinction coefficient (k) and film thickness (d) of SLHTPSM for i-line (365 nm) exposure wavelength and 5% transmittance.…”

Section: Introductionmentioning

confidence: 99%

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Optical property simulation of single-layer halftone phaseshifting masks for DUV microlithography

Jiang

Hong

Kim

et al. 1996

Semicond. Sci. Technol.

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An optical simulation for a single-layer halftone phaseshifting mask (SLHTPSM) has been established and verified by the experimental data from several different sources. This simulation is suitable for a wide lithography exposure wavelength; for example, i-line, KrF and ArF etc. Theoretical analyses give some important tendencies of the optical parameters such as refractive index, extinction coefficient and film thickness. The optimum SLHTPSM structures for KrF (248 nm) have been derived by the simulation processes, which include the optimized combinations of extinction coefficient/refractive index and film thickness/refractive index achieved to deliver the 5%, 10% and 20% transmittance and 180 • phaseshifting. The simulation shows the film refractive index to be in the region of 1.7-3. The simulation program also provides guidance for the SLHTPSM fabrications.

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Section: Physical Modelmentioning

confidence: 99%

Section: Matrix Approachmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical property simulation of single-layer halftone phaseshifting masks for DUV microlithography

Jiang

Hong

Kim

et al. 1996

Semicond. Sci. Technol.

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“…Numerous reports have appeared in literature [1,2], indicating that for the 64M-bit DRAM generation, i.e. for 0.35 um lithography requirements, the standard mask inspection and repair tools used at this generation, would meet the needs of E-APSM manufacture.…”

Section: Introductionmentioning

confidence: 99%

<title>Embedded attenuating phase-shift mask: printability of defects</title>

Singh

Williams²,

Yuan

et al. 1995

SPIE Proceedings

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on assignment to SEMATECH, Austin, TX) 2SEMATECH, Austin, TX 3Motorola inc., Austin, TX 4DuPont Photomasks Inc., Round Rock, TX SIBM Microelectronics, E. Fishkill, NY ABSTRACT The manufacture of an embedded attenuating phase shift mask (E-APSM) is the simplest among all the phase shift mask (PSM) types. This is because an E-APSM provides the necessary attenuation and phase shift requirements using a single layer absorber film. Therefore, the tasks of patterning, inspection and repair are much easier to accomplish than for a multi-level quartz etched or SOG/5i02 coated PSM.Reports in literature [1,21 indicate that an E-APSM, also referred to as a single-layer halftone PSM, is likely to be used for the contact masking layer in the manufacture of 64M-bit DRAMs. It has also been stated that defect-free E-APSMs will be manufactured using currently available mask making tools. Therefore, it could be inferred that the defect specifications for an E-APSM are expected to be the same as that for a standard chrome mask. Perturbation modeling studies indicate that this should be true [31.An experimental study of repair and printability of defects on contacts on an E-APSM, using a chrome-based embedded attenuating film [91 was performed. Exposures were made on an iline stepper with NA=O.6 and sigmaO.6. Oxide wafers were coated with a high contrast iline resist and the contact pattern was transferred into the oxide using a decorative etch process. Measurements were made using an SEM. The wafer results were also compared with printability studies done using an Aerial Imaging Measurement System.The results of repairs done on I j.im size defects on 2 im size contacts indicate that the currently available laser repair tool was successful in restoring the lithographic performance of the E-APSM contacts to an acceptable level. (on assignment to SEMATECH, Austin, TX) 2SEMATECH, Austin, TX 3Motorola Inc., Austin, TX 4DuPont Photomasks Inc., Round Rock, TX IBM Microelectronics, E. Fishkill, NY ABSTRACT The manufacture of an embedded attenuating phase shift mask (E-APSM) is the simplest among all the phase shift mask (PSM) types. This is because an E-APSM provides the necessary attenuation and phase shift requirements using a single layer absorber film. Therefore, the tasks of patterning, inspection and repair are much easier to accomplish than for a multi-level quartz etched or SOG/5i02 coated PSM.Reports in literature [1 ,2] indicate that an E-APSM, also referred to as a single-layer halftone PSM, is likely to be used for the contact masking layer in the manufacture of 64M-bit DRAMs. It has also been stated that defect-free E-APSMs will be manufactured using currently available mask making tools. Therefore. it could be inferred that the defect specifications for an E-APSM are expected to be the same as that for a standard chrome mask. Perturbation modeling studies indicate that this should be true [31.An experimental study of repair and printability of defects on contacts on an E-APSM, using a chrome-based embedded attenuating film [...

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On measurement of optical band gap of chromium oxide films containing both amorphous and crystalline phases

Hong

Kim

et al. 1997

Journal of Non-Crystalline Solids

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<title>Optimization of optical properties for single-layer halftone masks</title>

Cited by 9 publications

References 0 publications

Optical property simulation of single-layer halftone phaseshifting masks for DUV microlithography

Optical property simulation of single-layer halftone phaseshifting masks for DUV microlithography

<title>Embedded attenuating phase-shift mask: printability of defects</title>

On measurement of optical band gap of chromium oxide films containing both amorphous and crystalline phases

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