&lt;title&gt;Optical properties of annealed silicon rich oxide (SRO) films&lt;/title&gt;

Luna-López, A.; Aceves-Mijares, M.; Malik, O.; Pedraza, J.; Falcony, C.

doi:10.1117/12.667675

Cited by 3 publications

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“…The nonlinear nature of the capacitance distortion by the series resistance also changes the shape of the obtained C – V plots. Similar effects have been observed in EIS structures modified with high‐resistive ion‐selective membranes 20, 21, 27, 28 as well as in MOS structures with a high‐resistive substrate 25, 26.…”

Section: Resultssupporting

confidence: 75%

“…Moreover, this shift of the C – V curves is not parallel. This effect is a direct indication of a series resistance ‘problem’ 25–28. The nonlinear nature of the capacitance distortion by the series resistance also changes the shape of the obtained C – V plots.…”

Section: Resultsmentioning

confidence: 94%

“…As it has been demonstrated in Refs. 20, 21, 25–28, the existence of any series resistance can lead to a frequency‐dependent deformation of C – V plots of capacitive field‐effect structures and even to practically flat curves at high frequencies.…”

Section: Resultsmentioning

confidence: 99%

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Capacitance–voltage and impedance‐spectroscopy characteristics of nanoplate EISOI capacitors

Abouzar

Moritz

Schöning

et al. 2011

Physica Status Solidi (a)

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241 6009 53235 Frequency-dependent capacitance-voltage (C-V) and impedance-spectroscopy characteristics of nanoplate capacitive field-effect electrolyte-insulator-silicon-on-insulator (EISOI) structures with various thicknesses (30, 60 and 350 nm) of the top p-Si layer are investigated for the first time. The frequencydependent C-V curves of EISOI structures show an unusual behaviour, which significantly differs from that of conventional EIS structures. Due to the large series resistance of the nanoplate top Si, the C-V curves of the EISOI structures show stronger frequency dependence in the accumulation region. In addition, C-V curves show typical low-frequency behaviour even at higher frequencies (up to 8 kHz). An equivalent circuit of an EISOI structure is discussed taking into account the series resistance of the nanoplate top Si.

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Section: Resultssupporting

confidence: 75%

Section: Resultsmentioning

confidence: 94%

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Capacitance–voltage and impedance‐spectroscopy characteristics of nanoplate EISOI capacitors

Abouzar

Moritz

Schöning

et al. 2011

Physica Status Solidi (a)

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“…After thermal treatment at temperatures above 1000°C, the off-stoichiometric oxide, SiO x ͑x Ͻ 2͒, is separated into silicon nanoclusters ͑crystalline or amorphous depending on their size͒, defects ͑oxidation states͒, and SiO 2 . 3 Silicon nanocrystals ͑Si nCs͒ have been observed in SRO by transmission electron microscopy corroborating the phase separation, 4 and the existence and size of nCs depend on the excess silicon and annealing conditions. Different techniques have been used to obtain SRO, including plasma enhanced chemical vapor deposition ͑CVD͒, 5 low-pressure chemical vapor deposition ͑LPCVD͒, 3 silicon implantation into thermal oxide, 6 reactive sputtering, 7 and others.…”

Section: Introductionmentioning

confidence: 85%

Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition

López-Estopíer

Aceves-Mijares

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Room temperature cathodoluminescence and photoluminescence were used to study silicon rich oxide ͑SRO͒ films with 5.5% silicon excess. Intense blue and red luminescence emissions were found. A SRO film was deposited by low-pressure chemical vapor deposition and was annealed at 1100°C by 3 h in a nitrogen ambient. The emission from the SRO films was modeled as being due to donor-acceptor-pair decay. Calculations have been made to obtain the first estimates of the donor and acceptor energy distributions in SRO films.

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“…The optical band gap determined from the absorption spectra of the SRO films has been found to increase as their oxygen concentration increases. 21 This indicates that the SRO/ SiO 2 barrier is lowered at larger x, thereby increasing the charge-loss rate, which could explain why the charge-loss rate gradually increases with increasing x above 1.2, as shown in Fig. 7.…”

Section: Resultsmentioning

confidence: 82%

Nonvolatile memories by using charge traps in silicon-rich oxides

Lim

Kim

Hong

et al. 2010

Journal of Applied Physics

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The nonvolatile memory characteristics of silicon-rich oxide (SRO, SiOx) grown at room temperature for charge-trapping layer are first reported and shown to exhibit a strong dependence on oxygen content (x). The memory window that is estimated by capacitance-voltage curves monotonically decreases with increasing x from 1.0 to 1.8, possibly resulting from the x-dependent variation in the Si suboxide states responsible for the charge traps, as evidenced by x-ray photoelectron spectroscopy. The density of the charge traps is estimated to be (3.9–8.8)×1012 cm−2 for x=1.0–1.4. The charge-loss rate sharply decreases at x=1.2, but by further increase in x above 1.2, it gradually increases, which can be explained by the lowered SRO/SiO2 barrier due to the increased optical band gap of SRO at larger x

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<title>Optical properties of annealed silicon rich oxide (SRO) films</title>

Cited by 3 publications

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Capacitance–voltage and impedance‐spectroscopy characteristics of nanoplate EISOI capacitors

Capacitance–voltage and impedance‐spectroscopy characteristics of nanoplate EISOI capacitors

Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition

Nonvolatile memories by using charge traps in silicon-rich oxides

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