&lt;title&gt;Optical profilometer featuring multiple virtual styli for the packaging and interconnect environment&lt;/title&gt;

Clark, Royce; Flake, Robert H.; Siddique, Asif

doi:10.1117/12.186651

Search citation statements

Order By: Relevance

Paper Sections

Select...

Tab Jib Height Measurement Results1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1995

Publication Types

Select...

Other1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…I.;;.:i:;:::::.:.:::::.::.:::. ::::IHl -j H silicon die Figure 5.TAB bond height geometry These TAB bond height measurements were made by using an optical profilometer [8], developed in our laboratory . Figure 5 shows the vertical locations of measurement for TAB bond heights for these three inner leads, where the H represents the height difference between the top of lead and the top of the silicon die and the Hi represents the height difference between the top oflead and the top of the bump.…”

Section: Tab Jib Height Measurement Resultsmentioning

confidence: 99%

<title>Package and module substrate interconnect evaluation by thermal time domain reflectometry (TTDR)</title>

1995

Self Cite

View full text Add to dashboard Cite

A TAB package inner lead interconnect is characterized experimentally by thermal time-domain reflectometry. In order to estimate the low frequency thermal characteristic impedance of the lead in a module substrate, we apply WA (Total Pulse Area) steady state methodology to analyze transient 1TDR measurements. TAB ILB bond thicknesses are measured and compared with estimates of the thermal resistances of short portions of the inner leads terminating at the ILB. The ILB thermal constriction and contact resistance of the bonds measured appear to be negligible compared to the lead resistance.

show abstract

Section: Tab Jib Height Measurement Resultsmentioning

confidence: 99%