&lt;title&gt;Optical gain in planar waveguides&lt;/title&gt;

Ostatnický, T.; Janda, P.; Valenta, J.; Pelant, I.

doi:10.1117/12.739493

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…However, interpretation of the VSL data in lowgain materials is less straightforward and several gainlike artifacts can mask the real gain effects. 17,18,21,22 Lourenço et al 23 proposed a technique for low-gain measurements in short waveguides in a geometry similar to VSL. In this configuration, the sensitivity to low gains was improved, but the aforementioned artifacts, arising mainly from the discrepancy between the one-dimensional VSL model and the real system geometry and/or waveguiding effects, could not be fully eliminated.…”

Section: Nonlinear Absorption Coefficient Measurements-vsl and Sesmentioning

confidence: 99%

Optical gain of the1.54 μmemission in MBE-grown Si:Er nanolayers

Dohnalová

Gregorkiewicz

et al. 2010

Phys. Rev. B

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We present investigations of the optical gain cross section of 1.54 m Er-related emission at 4.2 K in Si/Si:Er molecular-beam-epitaxy-grown multinanolayers. This ultranarrow ͑full width at half maximum below 8 eV͒ emission originating from the unique Er-related optical complex, Er-1 center, ensures the best condition to achieve stimulated emission. The experiments were carried out using a combination of the variable stripe length and shifting excitation spot techniques under pulsed and continuous-wave excitations. The comparison of results for both excitation regimes enables to estimate an optical gain within the strong optical losses due to the free carrier absorption. Based on these measurements, the upper limit of the optical gain cross section of 10 −17 cm 2 and the gain coefficient of 8.8 cm −1 are deduced.

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