The thermally evaporated stoichiometric films of HgI 2 show a preferred orientation of ͑102͒ and ͑002͒ parallel to substrate plane for film thicknesses below and above 1450 nm, respectively. The band gap determined by optical absorption shows the anisotropic nature of the two orientations with an anisotropic ratio E g(102) /E g(002) ϭ 0.86. The change in band gap with film thickness in either orientation is attributed to the residual stress in the film. An increase in the band gap with residual stress is observed for the ͑102͒ orientation as opposed to a decreasing band gap with stress for the ͑002͒ orientation. The annealing experiment carried out on the ͑102͒-oriented film shows a switch over to the ͑002͒ orientation at 110°C. The results of the annealing experiment support well the results of thickness dependence, viz., the anisotropic nature of the band gap at two orientations and the residual stress-induced band gap change.