&lt;title&gt;Micromachined uncooled VO&lt;formula&gt;&lt;inf&gt;&lt;roman&gt;2&lt;/roman&gt;&lt;/inf&gt;&lt;/formula&gt;-based IR bolometer arrays&lt;/title&gt;

Jerominek, Hubert; Picard, Francis; Swart, Nicholas; Renaud, Martin; Levesque, Marc; Lehoux, Mario; Castonguay, Jean-Sebastien; Pelletier, M.; Bilodeau, Ghislain; Audet, Danick; Pope, Timothy D.; Lambert, Philippe

doi:10.1117/12.243056

Cited by 46 publications

(4 citation statements)

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“…In the low-temperature state, VO 2 is an electrical insulator and transparent to IR light. The marked changes in the electrical and optical properties associated with the M-I transition make VO 2 a promising material for a wide variety of applications including temperature sensing devices, 2) optical filters or switching devices, 3,4) modulators and polarizers of submillimeter waves, 5) optical data storage media, 6) memory materials, 7) field-effect transistors, 8,9) noncooled infrared bolometers, 10) and smart windows. 11,12) The driving mechanism of the M-I transition is still under debate and has long been argued whether if is the Mott 13) or Peierls 14) transition.…”

Section: Introductionmentioning

confidence: 99%

Metal–insulator transition characteristics of Mo- and Mn-doped VO₂films fabricated by magnetron cosputtering technique

Liu¹,

Fang²,

Su³

et al. 2014

Jpn. J. Appl. Phys.

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Mo-and Mn-doped VO 2 thin films have been grown on c-cut sapphire substrates by the magnetron co-sputtering technique. The effects of Mo and Mn doping on the structure and metal-insulator transition of the doped VO 2 thin films were studied. An enlargement of the out-of-plane lattice constant of the film caused by Mo doping was observed. As expected, the transition temperature (T MI) is reduced by Mo doping. However, the valence of the Mo ions doped in the VO 2 films is determined by X-ray photoelectron spectroscopy to be 6+ on the surface, but 4+ and 3+ in the bulk part of the films. The reduction in T MI observed in this study is attributed to the variation in the band structure resulting from the incorporation of Mo 4+ into the VO 2 lattice. The optical transmission is remarkably enhanced by low-concentration Mo doping and then monotonically decreases with increasing Mo content. On the other hand, the out-of-plane lattice constant and T MI are not affected by Mn doping. The transmission is enhanced and then monotonically increases with increasing Mn concentration. The thermochromism of doped films is suppressed by Mo and Mn doping.

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Section: Introductionmentioning

confidence: 99%

Metal–insulator transition characteristics of Mo- and Mn-doped VO₂films fabricated by magnetron cosputtering technique

Liu¹,

Fang²,

Su³

et al. 2014

Jpn. J. Appl. Phys.

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“…2E . Compared with previous microbridge ( 18 , 19 ) and pellicle-supported ( 7 , 30 ) structures, the fabrication process of tubular structure is simpler and costless (figs. S7 and S8).…”

Section: Resultsmentioning

confidence: 99%

One-step rolling fabrication of VO ₂ tubular bolometers with polarization-sensitive and omnidirectional detection

Wu,

Zhang,

Chen

et al. 2023

Sci. Adv.

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Uncooled infrared detection based on vanadium dioxide (VO 2 ) radiometer is highly demanded in temperature monitoring and security protection. The key to its breakthrough is to fabricate bolometer arrays with great absorbance and excellent thermal insulation using a straightforward procedure. Here, we show a tubular bolometer by one-step rolling VO 2 nanomembranes with enhanced infrared detection. The tubular geometry enhances the thermal insulation, light absorption, and temperature sensitivity of freestanding VO 2 nanomembranes. This tubular VO 2 bolometer exhibits a detectivity of ~2 × 10 8 cm Hz 1/2 W −1 in the ultrabroad infrared spectrum, a response time of ~2.0 ms, and a calculated noise-equivalent temperature difference of 64.5 mK. Furthermore, our device presents a workable structural paradigm for polarization-sensitive and omnidirectional light coupling bolometers. The demonstrated overall characteristics suggest that tubular bolometers have the potential to narrow performance and cost gap between photon detectors and thermal detectors with low cost and broad applications.

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“…The sensor is customarily made of a photoconductive layer such as InSb, InGaAs, HgCdTe or constructed as a quantum well IR photodetector (QWIP) [10,11]. Latterly, uncooled IR sensors such as thermopile [12,13] and bolometers (thermistors) including vanadium oxide (VO x ) [14,15,16] and amorphous silicon (a-Si) [17,18,19,20] have emerged as new alternative materials of choice for thermographic devices (microbolometers) because they do not require expensive cooling methods. Especially a-Si has shown great compatibility with the complementary metal–oxide–semiconductor (CMOS) and MEMS technologies [17,19,20].…”

Section: Introductionmentioning

confidence: 99%

MEMS-Based Wavelength-Selective Bolometers

et al. 2019

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We propose and experimentally demonstrate a compact design for membrane-supported wavelength-selective infrared (IR) bolometers. The proposed bolometer device is composed of wavelength-selective absorbers functioning as the efficient spectroscopic IR light-to-heat transducers that make the amorphous silicon (a-Si) bolometers respond at the desired resonance wavelengths. The proposed devices with specific resonances are first numerically simulated to obtain the optimal geometrical parameters and then experimentally realized. The fabricated devices exhibit a wide resonance tunability in the mid-wavelength IR atmospheric window by changing the size of the resonator of the devices. The measured spectral response of the fabricated device wholly follows the pre-designed resonance, which obviously evidences that the concept of the proposed wavelength-selective IR bolometers is realizable. The results obtained in this work provide a new solution for on-chip MEMS-based wavelength-selective a-Si bolometers for practical applications in IR spectroscopic devices.

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<title>Micromachined uncooled VO<formula><inf><roman>2</roman></inf></formula>-based IR bolometer arrays</title>

Cited by 46 publications

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Metal–insulator transition characteristics of Mo- and Mn-doped VO₂films fabricated by magnetron cosputtering technique

Metal–insulator transition characteristics of Mo- and Mn-doped VO₂films fabricated by magnetron cosputtering technique

One-step rolling fabrication of VO ₂ tubular bolometers with polarization-sensitive and omnidirectional detection

MEMS-Based Wavelength-Selective Bolometers

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<title>Micromachined uncooled VO<formula><inf><roman>2</roman></inf></formula>-based IR bolometer arrays</title>

Cited by 46 publications

References 0 publications

Metal–insulator transition characteristics of Mo- and Mn-doped VO2films fabricated by magnetron cosputtering technique

Metal–insulator transition characteristics of Mo- and Mn-doped VO2films fabricated by magnetron cosputtering technique

One-step rolling fabrication of VO 2 tubular bolometers with polarization-sensitive and omnidirectional detection

MEMS-Based Wavelength-Selective Bolometers

Contact Info

Product

Resources

About

Metal–insulator transition characteristics of Mo- and Mn-doped VO₂films fabricated by magnetron cosputtering technique

Metal–insulator transition characteristics of Mo- and Mn-doped VO₂films fabricated by magnetron cosputtering technique

One-step rolling fabrication of VO ₂ tubular bolometers with polarization-sensitive and omnidirectional detection