&lt;title&gt;Mercuric iodide polycrystalline films&lt;/title&gt;

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, C.R.; MacDonald, L.R.; Skinner, N.; Hoffman, Edward J.; Fornaro, L.; Mussio, L.; Saucedo, Edgardo; Gancharov, A.

doi:10.1117/12.450793

Cited by 35 publications

(37 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, in the range 155 -165 ºC, a transition temperature for the microcrystal orientation may be appointed, with (0 0 l) planes from perpendicular to parallel to the substrate. The fact that preferred orientation with the planes (0 0 l) parallel to the substrate increases when the growing temperature increases, was also found for mercuric iodide [7] and lead iodide [11][12][13] films. On the contrary, the change in the microcrystal orientation of bismuth tri-iodide films was never observed for mercuric iodide films, which preferred growth orientation is always with the (0 0 l) plane parallel to the substrate [7].…”

Section: Methodsmentioning

confidence: 65%

“…Although epitaxial films of these two compounds have not yet been obtained, promising results have been reported for oriented mercuric iodide [5,7] and lead iodide films.…”

Section: Introductionmentioning

confidence: 92%

“…On the other hand, if attention is paid to the final application, the selected method should permit an easy scale up to large and uniform areas. For this purpose, PVD is suitable as well, and it has been the main method employed for growing mercuric iodide [4][5][6][7] and lead iodide [8][9][10][11][12][13] films. The current success with films of these two last iodides led us to consider bismuth tri-iodide as possible compound semiconductor for X-ray imaging.…”

Section: Introductionmentioning

confidence: 99%

“…Several materials, such as Se [1], CdTe [2][3], HgI 2 [4][5][6][7], PbI 2 [8][9][10][11][12][13] and BiI 3 [14,15] have been used for growing films intended for direct and digital ionizing radiation imaging, Among them, the heavy metal iodides have resulted to have especial properties. They have high densities and atomic absorption coefficients (which determine that thicknesses of 70-80 µm are enough for 99% of absorption of 20 keV radiation), wide energy band gaps (1.7 -2.5 eV at RT), therefore they give a lower dark current through the detector without any cooling, and a relative low energy necessary for the creation of an electron-hole pair (4 -5 eV), then, they may give a higher signal to noise response [16].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Correlation between growth orientation and growth temperature for bismuth tri‐iodide films

Cuña

Aguiar

Gancharov

et al. 2004

Cryst. Res. Technol.

View full text Add to dashboard Cite

This paper reports the growth of bismuth tri-iodide thick films intended for direct and digital X-ray imaging. Films were grown by the vertical physical vapor deposition method, onto glass substrates 2"x 2" in size, with gold previously deposited as rear electrode. The film thickness was up to 33 µm (±5 %). Optical microscopy and SEM were performed on the films and grain size resulted to be up to 40 µm. A strong correlation was found between the microcrystals growth orientation and the growth temperature. At low temperatures, microcrystals grow with their c axis parallel to the substrate, whereas at higher temperatures, they grow with their c axis perpendicular to the substrate. The higher the growth temperature, the lower the dark current of the film, and the higher the resistivity, which was from 10 13 to 10 15 Ωcm. A sensitivity to X-rays of 6.9 nC/R.cm 2 was measured irradiating the films with X-rays from a mamographer. Film properties were correlated with the growth temperature, with previous results for bismuth tri-iodide films and monocrystals and with data for films of alternative materials such as lead and mercuric iodide.

show abstract

Section: Methodsmentioning

confidence: 65%

“…Although epitaxial films of these two compounds have not yet been obtained, promising results have been reported for oriented mercuric iodide [5,7] and lead iodide films.…”

Section: Introductionmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Correlation between growth orientation and growth temperature for bismuth tri‐iodide films

Cuña

Aguiar

Gancharov

et al. 2004

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…Using this model as a reference, different configurations have been evaluated changing the flat panel configuration. The thickness of scintillator is different in each detector (GOS 0.14 mm (Hamamatsu, 2007), HgI 2 0.25 mm (Iwanczyk et al, 2001), CdTe 0.2 mm (Izumi et al, 2001) and CsI 0.6 mm (Chabbal et al, 2002)). In the direct flat panel the thickness of a:Se is 1 mm (Izumi et al, 2001).…”

Section: The Monte Carlo Modelmentioning

confidence: 99%

Application of the Monte Carlo method to analyze materials used in flat panel detectors to obtain X-ray spectra

Gallardo

Pozuelo

Querol

et al. 2015

Annals of Nuclear Energy

View full text Add to dashboard Cite

Abstract. An accurate knowledge of the photon spectra emitted by X-ray tubes in radiodiagnostic is essential to better estimate the imparted dose to patients and to improve the quality image obtained with these devices. In this work, it is proposed the use of a flat panel detector together with a PMMA wedge to estimate the actual X-ray spectrum using the Monte Carlo method and unfolding techniques. The MCNP5 code has been used to model different flat panels (based on indirect and direct methods to produce charge carriers from absorbed X-rays) and to obtain the dose curves and system response functions. Most of the actual flat panel devices use scintillator materials that present K-edge discontinuities in the mass energy-absorption coefficient, which strongly affect the response matrix. In this paper, the applicability of different flat panels for reconstructing X-ray spectra is studied. The effect of the mass energy-absorption coefficient of the scintillator material has been studied on the response matrix and consequently, in the reconstructed spectra. Different unfolding methods are tested to reconstruct the actual X-ray spectrum knowing the dose curve and the response function. It has been concluded that the regularization method Modified Truncated Singular Value Decomposition (MTSVD) is appropriate to unfold Xray spectra in all the scintillators studied.

show abstract

Photoconductor Digital X‐Ray Imaging

Zentai

2010

Solar Cells and Their Applications

View full text Add to dashboard Cite

<title>Mercuric iodide polycrystalline films</title>

Cited by 35 publications

References 23 publications

Correlation between growth orientation and growth temperature for bismuth tri‐iodide films

Correlation between growth orientation and growth temperature for bismuth tri‐iodide films

Application of the Monte Carlo method to analyze materials used in flat panel detectors to obtain X-ray spectra

Photoconductor Digital X‐Ray Imaging

Contact Info

Product

Resources

About