&lt;title&gt;Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography&lt;/title&gt;

Watanabe, Takeo; Kinoshita, Hiroo; Miyafuji, Atsushi; Irie, Shigeo; Shirayone, Shigeru; Mori, Shigeyasu; Yano, Ei; Hada, Hideo; Ohmori, Katsumi; Komano, Hiroshi

doi:10.1117/12.390100

Cited by 10 publications

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“…A wafer held by an electrostatic chuck and wafer distortion is measurable to an Figure 21 shows the configuration of a three-aspherical-mirror system. [43][44][45] It consists of illumination optics, mask and wafer scanning stages, mask and wafer alignment optics, a reduction camera, and a load-lock chamber for loading wafers. The reduction camera consists of three aspherical mirrors.…”

Section: Exposure Tools and Experimentsmentioning

confidence: 99%

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Kinoshita

2007

COSMOS

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EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used. Development of manufacturing equipment is accelerated to aim at the utilization starting from 2011. The critical issues of development are the EUV light source which has the power over 115 W and resist with high sensitivity and low line edge roughness (LER).

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Section: Exposure Tools and Experimentsmentioning

confidence: 99%

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Kinoshita

2007

COSMOS

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“…Thus far, we have evaluated the lithographic performance of various types of resist [4][5][6][7][8][9][10] such as chemically amplified (CA) resist 2) and non-chemically amplified resist. 3) A sensitivity of 2 mJ/cm 2 and a resolution of 40 nm linewidth have been achieved.…”

Section: Introductionmentioning

confidence: 99%

“…3) A sensitivity of 2 mJ/cm 2 and a resolution of 40 nm linewidth have been achieved. 4,9,10) In EUV lithography, the required of the resist sensitivity is less than 2 mJ/cm 2 , which markedly relaxes the required EUV light source power, from 110 W to less than 50 W. Furthermore, a line edge roughness (LER) of less than 1.5 nm (3') and an outgassing total fragment pressure of less than 10 À6 Pa for the entire exposure time are required. Then the basic physical and chemical properties of various EUV resist candidates such as sensitivity, outgas characteristics, and internal chemical behavior under EUV real exposure spectrum have to be evaluated.…”

Section: Introductionmentioning

confidence: 99%

Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU

Watanabe

Kinoshita

Sakaya

et al. 2005

Jpn. J. Appl. Phys.

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This paper presents a touch probe system with improved sensitivity and repeatability. In this probe, a tip ball is attached to the probe stylus through elastic bodies that enable the ball to be displaced in three directions. When the tip ball touches the workpiece, three fibre optic lever displacement sensors measure directly the ball's displacement and direction. Because the ball is located in sensitive directions of all of the sensors, this probe complies with Abbe's principle, which is a basis of precision measurement. Various performance tests have been performed using one-dimensional stages. The measurement resolution of the tip ball displacement was less than 12 nm in these experiments. Thus, the probe triggering level was set safely to 50 nm, taking into account the associated noise levels. The variation of the pretravel was less than 25 nm in all directions. The measurement force was approximately 0.6 mN in the horizontal direction and 4.5 mN in the vertical direction.

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“…So far, we have evaluated the lithographic performance of various kinds of resists [6][7][8][9][10][11] such as both chemically amplified (CA) resist [2][3][4] and non-chemically amplified resist. 5) A sensitivity of 2 mJ/cm 2 and a resolution of 40 nm line width have already been achieved.…”

Section: Introductionmentioning

confidence: 99%

Development of Fast-Photospeed Chemically Amplified Resist in Extreme Ultraviolet Lithography

Watanabe

Hada

Lee

et al. 2005

Jpn. J. Appl. Phys.

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In a high-annealing type resist system that employs polyhyodroxy styrene as a base resin, we found that tri-phenysulfonium cyclo(1,3-perfluoropropanedisulfone) imidate when employed as a photoacid generator (PAG) is more sensitive than tri-phenysulfonium nonaflate under extreme ultraviolet (EUV) exposure. However, their sensitivities are almost the same under KrF and EB exposures. As results of both outgassing species and FT-IR measurements, the EUV-induced reaction of cyclo(1,3-perfluoropropanedisulfone) imidate employed as an anion of PAG occurred more efficiently than that of nonaflate employed as an anion of PAG. Therefore, the anion of PAG contributes to achieve a fast photospeed under EUV exposure. Furthermore, from the sensitivity curve measurements, it is found that tri-phenylsulfonium employed as a cation increases the developing rate more than diphenyl-naphthylsulfonium employed as a cation of PAG. As a result, we have succeeded in developing a fast photospeed chemically amplified resist that has a sensitivity of 1.1 mJ/cm2 and a partial pressure displacement accumulated in the total exposure time between after and before exposures on the order of 10-6 Pa s.

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<title>Lithographic performance and optimization of chemically amplified single-layer resists for EUV lithography</title>

Cited by 10 publications

References 0 publications

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Euv Lithography for Semiconductor Manufacturing and Nanofabrication

Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU

Development of Fast-Photospeed Chemically Amplified Resist in Extreme Ultraviolet Lithography

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