&lt;title&gt;In-situ process monitoring in metal deposition processes&lt;/title&gt;

Kobayashi, Shigeru; Nishitani, Eisuke; Shimamura, Hideaki; Yajima, A.; Kishimoto, Seiji; Yoneoka, Yuji; Uchida, Hiroyuki; Morioka, Natsuyo

doi:10.1117/12.221303

Cited by 3 publications

(3 citation statements)

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“…Some recent real-time applications of QMS include: in situ feedback control of a plasma enhanced chemical-vapor deposition (PECVD) process (Knight [3] and Greve et al [4]), sidewall spacer etching (Min [5]), endpoint uniformity sensing and analysis during silicon dioxide plasma etching (Chambers et al, [6], [7]), monitoring of a tungsten metal CVD process (Kobayashi et al [8]), process sensing and metrology in amorphous and selective area silicon plasma deposition (Chowdhury et al [9]), process sensing during rapid thermal chemical-vapor deposition (RTCVD) of polysilicon (Rying et al [10], Tedder [11], [12], Smith [13], Lu [14], [15], and Rubloff et al [16]), and more recently in situ monitoring and characterization of RTCVD thin oxide (SiO ), nitride (Si N ), and tungsten (W) films (Lu et al [17], Rying et al [18], and Gougousi et al [19], [20]). …”

Section: In Situ Selectivity and Thickness Monitoring Duringmentioning

confidence: 99%

In Situ Selectivity and Thickness Monitoring During Selective Silicon Epitaxy Using Quadrupole Mass Spectrometry and Wavelets

Rying

Öztürk²,

Bilbro³

et al. 2005

IEEE Trans. Semicond. Manufact.

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This paper reports on a novel in situ sensing technique for monitoring the thickness of selectively grown Si epitaxial layers. The technique can be extended to detect selectivity loss when Si nuclei begin to appear on the insulator surface. In this technique, a quadruple mass spectrometer (QMS) monitors the ionized molecular hydrogen (H + 2 ) signal, which is a by-product of the chemical-vapor deposition process. The thickness of the epitaxial layer is determined by evaluating the area under the hydrogen signal. We have deliberately used silane (SiH 4 ) without HCl or Cl 2 to achieve both nonselective and selective depositions.We also show that the amount of hydrogen produced by the deposition process is a strong function of the exposed Si area on the wafer and the effect can be accurately monitored by QMS. This finding was exploited to develop an in situ sensing method to detect the selectivity loss. When selectivity is lost, Si nuclei begin to form on the insulator surface increasing the effective Si area on the wafer. Consequently, the rate of hydrogen production increases rapidly as nuclei coalesce, resulting in a distinct change in the functional form of the hydrogen signal. The hydrogen signal was analyzed using an automatic edge detection procedure based on the wavelet transform modulus maxima representation. The technique facilitated the determination of selective film thickness from the time-integrated hydrogen (H + 2 ) signal. To the authors' knowledge, this paper represents one of the first applications of wavelets to in situ process monitoring and fault detection in semiconductor manufacturing. The authors expect the methodology presented in this paper to be readily transferable to other selective deposition processes, including those that utilize dichlorosilane and disilane since hydrogen is a by-product of those processes as well.Index Terms-Edge detection, in situ selectivity loss detection, , rapid thermal chemical-vapor deposition, selective silicon epitaxy, wavelet transform modulus maxima.

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Section: In Situ Selectivity and Thickness Monitoring Duringmentioning

confidence: 99%

In Situ Selectivity and Thickness Monitoring During Selective Silicon Epitaxy Using Quadrupole Mass Spectrometry and Wavelets

Rying

Öztürk²,

Bilbro³

et al. 2005

IEEE Trans. Semicond. Manufact.

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“…Examples may be drawn from the metals industry, where on-line monitoring of steel blast furnace off-gases and reagent gas-mixing stations 60 or aluminum potline smelter emissions 70 can be used to optimize plant efficiency. Monitoring the composition and purity of reagent gases is particularly critical in the electronics industry, where PMS has been used to control various chemical vapor deposition, [71][72][73] molecular beam epitaxy, 74 and plasma etching 73 processes. The complex processing associated with electronics devices and their relative intolerance of flaws suggests a high value added.…”

Section: Applications Of Process Mass Spectrometrymentioning

confidence: 99%

“…In this environment, the electronics industry was one of the first to embrace PMS for on-line control . A wide range of reagents can be monitored, including simple gases (like H 2 and NH 3 73 ) and more complex and/or corrosive reagents (like SiH 4 , SiF 4 , and HCl) and intermediates. , The mass spectrometer can also sense leaks in the reagent lines, a critical function in systems where sub-ppm contamination by components of air can compromise product quality. Besides true process monitoring and control, PMS has played a crucial role in elucidating the mechanisms of important deposition and etching reactions (e.g., refs and ), thereby facilitating modeling and “off-line” optimization of these processes.…”

Section: Applications Of Process Mass Spectrometrymentioning

confidence: 99%

On-Line Mass Spectrometry: A Faster Route to Process Monitoring and Control

Cook

Bennett

Haddix

1999

Ind. Eng. Chem. Res.

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A critical review of on-line mass spectrometry is presented, illustrating instrumentation, data treatment, and applications drawn from both control and research environments. Both direct and membrane inlets are included. The discussion of instrumentation focuses on commercially available options, although some research options that offer promise for future process applications are also mentioned briefly. Special considerations attendant upon the high-precision measurements needed for simultaneous analysis and continuous process control are emphasized. Applications illustrate a range of problems benefitting from rapid, simultaneous analysis of volatiles.

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Semiconductor and thin film applications of a quadrupole mass spectrometer

Waits

1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Commercial quadrupole mass spectrometer (QMS) residual gas analyzers became available in the late 1960s and have been popular in R&D laboratories, but have found limited use in semiconductor manufacturing. To sample at pressures above 10−5 Torr with ppm sensitivity or better (relative to the total process pressure), differential pumping is usually required. The newly available, small, high-pressure QMS sensors can operate as high as 10–20 mTorr without differential pumping, but provide somewhat lower mass resolution and partial pressure sensitivity than a standard QMS. Applications in semiconductor manufacturing include equipment monitoring, process monitoring, and effluent analysis. Equipment monitoring can include qualification after preventative maintenance, rate-of-rise tests, and leak identification and detection. Usually the burning question is, Why won’t the vacuum chamber pump down? Other uses that are not usually considered include the qualification of replaceable parts: sputter cathodes, electrodes, lamps, shields, etc. In process monitoring, the key question is, Is this process running normally? A manufacturing monitor can be useful simply by providing a comparison between a well-behaved high-yield process and a marginal or failing process. Examples are given for physical vapor deposition (sputtering) processes, chemical vapor deposition, and plasma etching. The effluent from chemical vapor deposition and plasma etch processes can be analyzed to measure the efficiency of process gas utilization or to monitor the efficacy of abatement methods used for the removal of global warming gases.

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<title>In-situ process monitoring in metal deposition processes</title>

Cited by 3 publications

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In Situ Selectivity and Thickness Monitoring During Selective Silicon Epitaxy Using Quadrupole Mass Spectrometry and Wavelets

In Situ Selectivity and Thickness Monitoring During Selective Silicon Epitaxy Using Quadrupole Mass Spectrometry and Wavelets

On-Line Mass Spectrometry: A Faster Route to Process Monitoring and Control

Semiconductor and thin film applications of a quadrupole mass spectrometer

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