&lt;title&gt;In-line failure analysis on productive wafers with dual-beam SEM/FIB systems&lt;/title&gt;

Weiland, R.; Boit, Christian; Dawes, Nick; Dziesiaty, A.; Demm, E.; Ebersberger, B.; Frey, L.; Geyer, S.; Hirsch, A.A.; Lehrer, C.; Meis, Peter; Kamolz, M.; Lezec, Henri J.; Rettenmaier, H.; Tittes, W.; Treichler, R.; Zimmermann, H.

doi:10.1117/12.425274

Cited by 6 publications

(6 citation statements)

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“…30 nm). It should be noted that the beam of Ga + ion with an accelerated voltage of 30-50 keV can induce the damage of sample surface, and then produce artifacts including implantation, amorphization, and mixing [7,8,12,13]. Such phenomena result in the changes in both mechanical properties and dimensions of the FIB milled mold.…”

Section: Resultsmentioning

confidence: 95%

Fabrication of micro-mold for glass embossing using focused ion beam, femto-second laser, eximer laser and dicing techniques

Youn

Takahashi

Okuno

et al. 2007

Journal of Materials Processing Technology

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Section: Resultsmentioning

confidence: 95%

Fabrication of micro-mold for glass embossing using focused ion beam, femto-second laser, eximer laser and dicing techniques

Youn

Takahashi

Okuno

et al. 2007

Journal of Materials Processing Technology

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“…It should be noted that the beam of Ga+ ion with an accelerated voltage of 30-50 keV can induce the damage of the sample surface, and then produce artifacts including implantation, amorphization, and mixing (Tseng, 2004;Tseng and Tanaka, 2001). Moreover, the implanted Ga in the FIB milled material can desorb during heating cycles and redeposit on and diffuse into the material surface (Weiland et al, 2001). Since the implanted Ga ions can precipitate during annealing above 250 • C, the contamination of mold surface may arise during heating in the emboss process.…”

Section: Resultsmentioning

confidence: 97%

A study on fabrication of silicon mold for polymer hot-embossing using focused ion beam milling

Youn

Okuyama

Takahashi

et al. 2008

Journal of Materials Processing Technology

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“…'Wafer return' is a possible workflow for the manufacture of microelectronics that attracted attention in the last decade [1][2][3][4][5][6]. It allows us to continue wafer processing after analysis with a focused ion beam (FIB) for local cross sectional scanning electron microscopy (SEM), the extraction of lamellae for in situ low-kV scanning transmission electron microscopy (STEM) or off-line TEM/STEM analysis.…”

Section: Introductionmentioning

confidence: 99%

“…Surface contamination after FIB milling has been investigated around the FIB structures using time-of-flight secondary ion mass spectroscopy (TOF-SIMS) [1,3], and on the full wafer surface by total reflection x-ray fluorescence (TXRF) [2] and vapor phase decomposition-atomic absorption spectroscopy (VPD-AAS) [1]. These investigations show that metal contaminants on the wafer remain at or below the 10 10 cm −2 [1,2] level and are in the 10 12 cm −2 [1] range near the FIB craters.…”

Section: Introductionmentioning

confidence: 99%

Surface contamination and electrical damage by focused ion beam: conditions applicable to the extraction of TEM lamellae from nanoelectronic devices

Bender

Franquet

Drijbooms

et al. 2015

Semicond. Sci. Technol.

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Focused ion beams (FIBs) are widely applied during manufacturing and for failure analysis, as a preparation tool for cross sectional scanning electron microscopy or for the extraction of lamellae for (scanning) transmission electron microscopy investigation of nanoelectronic devices. The impact of the ion beam milling on surface contamination is investigated by time-of-flight secondary ion mass spectroscopy, while the electrical surface damage is analyzed by a micro four-point probe. It is shown that the redeposition of milled Ga and Cu reaches levels below sensitivity (5 × 10 10 at cm −2 ) at less than 10 mm from FIB structures while the lateral range of electrical surface damage is an order of magnitude smaller. The major source of the redeposition is the resputtering of sputtered material from the sample that was previously deposited on the SEM column. The 2D distribution of the redeposition is asymmetric and is simulated well based on a simplified model of the column and sample configuration. The electrical surface damage mainly relates to the beam tails. Pt deposits for surface protection require much lower Ga + ion doses, and therefore have less impact on the wafer surface contamination. However, the range of electrical surface damage is larger for Pt deposits due to increased beam scattering in the low vacuum during the Pt deposition. With these contamination and damage levels and ranges, 'wafer return', i.e. continuing the wafer processing after the FIB, can be considered feasible for back-end of line processes with the loss of only the analyzed die or, potentially, also its neighbor. For front-end of line processes the acceptable contamination levels are more stringent and the feasibility of wafer return will be more process specific.

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<title>In-line failure analysis on productive wafers with dual-beam SEM/FIB systems</title>

Cited by 6 publications

References 0 publications

Fabrication of micro-mold for glass embossing using focused ion beam, femto-second laser, eximer laser and dicing techniques

Fabrication of micro-mold for glass embossing using focused ion beam, femto-second laser, eximer laser and dicing techniques

A study on fabrication of silicon mold for polymer hot-embossing using focused ion beam milling

Surface contamination and electrical damage by focused ion beam: conditions applicable to the extraction of TEM lamellae from nanoelectronic devices

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