<title>Improved-efficiency positive and negative luminescent light-emitting devices for mid-infrared gas-sensing applications</title>

Abstract

InAs I InAsSb SQW LED's incorporating A1As002Sb098 or In083A10 17As electron confming barrier layers are reported. Devices emitting 108 jtW and 84 tW at 300 K with QW emission at ?= 4.1 m and X= 4.7 tm exhibit quantum efficiencies that are improved by factors of 7 and 3 .4 respectively over control samples without the barrier. The operating wavelength of negative luminescent (NL) devices with InAs I In(As,Sb) strained-layer-superlattice (SLS) active regions has been extended to X= 6.8 rim. NL performance is limited by leakage currents that originate in the n+ contact layer.