<title>High-quality lead telluride films grown on silicon with buffer porous silicon layers</title>

Abstract

The structural characteristics of vacuum deposited PbTe films on Si substrate with buffer porous silicon layer were investigated. It was found, that films have orientation [100] along the growth direction. Electron and optical microscopy data have shown the absence offlaws, pores, metal and chalcogen microinclusions. Mosaik structure with a grain size 20-60 .tm was detected by selective chemical etching and acoustic microscopy methods. Single-crystal structure of grains was shown from the investigations of X-ray pole figures. It was found that thick amorphous layers on a porous silicon surface change the nature ofPbTe films growth.