“…However, in these papers, defect generation and transport have been considered as isotropic, which is not applicable for crystals with strong covalent bonding. For example, deformation patterns formed on Si surfaces depend on the laser field orientation in relation to crystallographic axes (Banishev et al, 1992;Young et al, 1983b;Emel'yanov, 1992). This effect is of practical importance, since the corresponding defect accumulation induces a local decrease in the melting temperature, and can also influence the Laser Induced Damage threshold (LIDT) (Wood, 1986;Bennett, Guenther, Kozlowski, Newnam and Soileau, 1995).…”