1993
DOI: 10.1117/12.147618
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<title>Formation of reversible and irreversible structural defects on silicon surface under laser-pulsed influence</title>

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Cited by 2 publications
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“…The results of experimental studies of laser irradiation of single crystal silicon wafers have been reported in (Emel'yanov, 1992;Banishev et al, 1992). On increasing laser intensity in normal irradiation, the following succession of patterns has been reported.…”
Section: D35 Comparison With Experimentsmentioning
confidence: 88%
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“…The results of experimental studies of laser irradiation of single crystal silicon wafers have been reported in (Emel'yanov, 1992;Banishev et al, 1992). On increasing laser intensity in normal irradiation, the following succession of patterns has been reported.…”
Section: D35 Comparison With Experimentsmentioning
confidence: 88%
“…Comparing to the experimental conditions of (Banishev et al, 1992), this corresponds to a vacancy density of the order of C + 5.10 18 cm −3 , or a film top surface temperature T + of about 1000 K ( 0.7T m ). This temperature is given by :…”
Section: D35 Comparison With Experimentsmentioning
confidence: 99%
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