&lt;title&gt;Failure mode analysis of high-power laser diodes&lt;/title&gt;

Ahrens, Robert G.; Jaques, J.; Dutta, Niloy K.; LuValle, Michael J.; Piccirilli, A. B.; Camarda, Ron M.; Fields, Anthony B.; Lawrence, Kenneth

doi:10.1117/12.462657

Cited by 3 publications

References 3 publications

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Cathodoluminescence degradation signatures of AlGaAs‐based high‐power laser arrays

Pommiès

Avella

Cánovas

et al. 2005

Physica Status Solidi (a)

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Low-temperature spectrally resolved cathodo luminescence was implemented on degraded AlGaAs-based high-power laser bars to investigate the degradation signatures. We focused on laser bars at different degradation levels and two degradation patterns were described and attributed to two degradation mechanisms. The first one may be due to some locally poorer material quality and induces the formation of dark spots defects in injection channels, the other one (which is correlated to some damages created on the facet during the mounting of the bar) triggers the formation of some characteristic dark defects originating from the facet and extending within the (110) oriented current injection channels.

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Cathodoluminescence degradation signatures of AlGaAs‐based high‐power laser arrays

Pommiès

Avella

Cánovas

et al. 2005

Physica Status Solidi (a)

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Internal defect localization in 980 nm ridge waveguide lasers

et al. 2006

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High power lasers emitting at 980 nm are essential for pumping sources of erbium-doped fiber amplifiers (EDFAs). These are used in longer distance telecommunications. Stability and reliability of the modules are two key characteristics. The present paper investigates "sudden random failures" of double quantum-well 980 nm high power ridge waveguide lasers implemented in EDFAs. For the inspection of the external and internal status of the device we used optical spectrum modulation experiments, electroluminescence measurements, scanning electron microscopy and cathodoluminescence investigations. The localization of internal defects is the main point of this work. Two different "sudden random failures" were found: catastrophical optical mirror damage (COMD) and internal dark line defect (DLD) formation.

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Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers

Song

Bai

et al. 2022

Crystals

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High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, as well as other fields. The reliability of high-power semiconductor lasers is the key point of the application system. Higher reliability is sought in the military defense and aerospace fields in particular. Reliability testing and failure analysis help to improve the performance of high-power semiconductor lasers. This article provides a basis for understanding the reliability issues of semiconductor lasers across the whole supply chain. Firstly, it explains the failure modes and causes of failure in high-power semiconductor lasers; this article also summarizes the principles and application status of accelerated aging experiments and lifetime evaluation; it also introduces common techniques used for high-power semiconductor laser failure analysis, such as the electron beam-induced current (EBIC) technique and the optical beam-induced current (OBIC) technique, etc. Finally, methods used to improve the reliability of high-power semiconductor lasers are proposed in terms of the preparation process, reliability screening, and method application.

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<title>Failure mode analysis of high-power laser diodes</title>

Cited by 3 publications

References 3 publications

Cathodoluminescence degradation signatures of AlGaAs‐based high‐power laser arrays

Cathodoluminescence degradation signatures of AlGaAs‐based high‐power laser arrays

Internal defect localization in 980 nm ridge waveguide lasers

Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers

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