&lt;title&gt;Enhanced defect inspection method for x-ray masks&lt;/title&gt;

Sekimoto, Misao; Okada, Ikuo; Saitoh, Y.; Matsuda, Takeshi

doi:10.1117/12.240488

SPIE Proceedings

1996

DOI: 10.1117/12.240488

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<title>Enhanced defect inspection method for x-ray masks</title>

Misao Sekimoto¹,

Ikuo Okada²,

Y. Saitoh³

et al.

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Current status and issues of X-ray mask

Uchiyama

ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157)

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The X-ray' mask is the most critical and most challenging elemenl' of a proximity X-ray lithography system, because the1 mask's dimensions must equal the final device dimensibns and the mask's membrane film, which is only about 2 mm thick, niust support a heavy metal absorber pattern. In NTT, we have developed fabrication technolokies for highly accurate and defectfree masks, such a: multiple exposure and distortion compensation methops in the electron-beam writing step, highly accurate dry (etching, and inspection and repair of mask defects. In ai$dition, the feasibility of proximity X-ray lithography was confirmed by fabricating a device. This article describes the current status of and issues regarding the X-ray mask.

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Current status and issues of X-ray mask

Uchiyama

ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157)

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<title>Enhanced defect inspection method for x-ray masks</title>

Cited by 1 publication

References 1 publication

Current status and issues of X-ray mask

Current status and issues of X-ray mask

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