<title>Electrical properties of some plasma polymers obtained by remote microwave plasma chemical vapor deposition</title>

Abstract

Some electrical properties of amorphous hydrogenated silicon-carbon (a-Si:C:H) films produced by remote microwave hydrogen plasma chemical vapour deposition (RHP-CVD) technique are discussed. The DC conduction of Al/aSi:C:H/Au and AlIa-Si:C:FJJn-Si structures has been measured. Dielectric response ofthese structures has also been examined. The films are weakly conducting materials with the activation energy of the conductivity equal to 0.28 eV and 0.03 eV. MIS structures containing the amorphous silicon-carbon films as an insulator show the influence of trapping phenomena at the insulator-silicon interface.