&lt;title&gt;Effective exposure-dose measurement in optical microlithography&lt;/title&gt;

Inoue, Soichi; Fujisawa, Toshio; Izuha, Kyoko

doi:10.1117/12.386445

Cited by 9 publications

(3 citation statements)

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“…The intensity distributions on the resist are different between the flood exposure and the patterned exposure. [3] The intensity varies depending on the pattern shapes, and the dose to size changes. For this reason, if the parameters obtained by a flood exposure experiment are applied to the simulation, the simulation results do not agree with the real SEM image.…”

Section: Modification Of Development Parametersmentioning

confidence: 99%

Modification of the Development Parameter for a Chemically Amplified Resist Simulator

Seo¹,

Bak²,

Kim³

et al. 2002

J. Korean Phys. Soc.

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It is necessary to have more appropriate resist parameters in order for a lithography simulator to predict real photoresist profiles. These process parameters are usually obtained by flood exposure experiments without pattern masks. However, real processes are performed with pattern masks. Since the intensity on the wafer is different with and without a pattern, the development parameters must be modified in order to predict real processes. Especially, the development parameters, one example of the process parameters, are crucial to mimic real processes. It has been reported that the development parameters of a photoresist with or without underlying patterns are different. In this paper, we modified the flood exposure development parameters of a 248-nm chemically amplified resist (CAR) to get patterned development parameters and compared them with the simulation results. First, we obtained the development parameters by using a flood exposure experiment and applied them to our lithography simulator LUV. The simulated resist profiles were then compared to SEM microphotographs. Second, we modified the development parameters for the simulated resist profile to match the SEM photographs. We also determined the relationship between the changes of the parameters and the pattern profile. We could see the effect of the modification in different line widths and sidewall angle.

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Section: Modification Of Development Parametersmentioning

confidence: 99%

Modification of the Development Parameter for a Chemically Amplified Resist Simulator

Seo¹,

Bak²,

Kim³

et al. 2002

J. Korean Phys. Soc.

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“…[17][18][19][20][21] Experimental schemes have also been devised to measure these parameters directly. [22][23][24][25][26] Typically, the concentration of inhibitor fluctuates throughout the thickness of the resist layer as well as laterally across the surface of the film. In addition, the optical absorption tends to vary over the time span of exposure.…”

Section: Multilevel Fabricationmentioning

confidence: 99%

Photoresist characterization and linearization procedure for the gray-scale fabrication of diffractive optical elements

2001

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We present a procedure for the characterization and the linearization of the photoresist response to UV exposure for application to the gray-scale fabrication of diffractive optical elements. A simple and reliable model is presented as part of the characterization procedure. Application to the fabrication of surface-relief diffractive optical elements is presented, and theoretical predictions are shown to agree well with experiments.

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“…Thus, it should be under strict control to achieve the best exposure uniformity and stability [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

A real-time exposure dose control algorithm for DUV excimer lasers

Liu

Qin

2008

Front. Optoelectron. China

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A real-time exposure dose control algorithm for deep ultraviolet (DUV) excimer lasers in a step-andscan optical lithography is presented. By establishing an abstract scan exposure model and analyzing the pulse-topulse energy fluctuation characteristics of DUV excimer lasers, a real-time dose regulation is implemented based on closed-loop feedback control, which especially focuses on reducing the effect of pulse energy overshot and pulseto-pulse stochastic fluctuation. The experiment conducted on an ArF excimer laser with wavelength of 193 nm, repetition rate of 4 kHz, and pulse energy of 5 mJ confirms that such a real-time dose control algorithm is able to achieve a dose accuracy of above 0.89% even with only 20 pulses. It is fully expected that this algorithm will not only meet increasingly stringent dose accuracy requirements for sub-half-micron lithography, but also be helpful to improve lithography throughput as well as efficiency.

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<title>Effective exposure-dose measurement in optical microlithography</title>

Cited by 9 publications

References 0 publications

Modification of the Development Parameter for a Chemically Amplified Resist Simulator

Modification of the Development Parameter for a Chemically Amplified Resist Simulator

Photoresist characterization and linearization procedure for the gray-scale fabrication of diffractive optical elements

A real-time exposure dose control algorithm for DUV excimer lasers

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