&lt;title&gt;Dissolution rate modeling of a chemically amplified positive resist&lt;/title&gt;

Ohfuji, Takeshi; Timko, Allen G.; Nalamasu, Omkaram; Stone, D.

doi:10.1117/12.154755

Cited by 14 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In a previous paper, we reported the calculated results of the activation energies for the acid catalyzed deblocking reactions by using of MO calculation and discussed their reaction mechanisms [3]. Although some studies about measuring the rate of the chemically amplified reaction in the resist film has been reported [4][5][6][7][8][9], these results are not able to analyze the photoacid generation reaction and deblocking reaction individually, especially in the case of acetal type protecting groups which can easily be cleaved during the exposure. On the other hand, the measurement of the reaction rates and the activation energies of each reaction step is very important for the molecular design of high performance resist materials.…”

Section: Introductionmentioning

confidence: 99%

Novel Analysis of Deblocking Reaction in DUV Resists.

Kameyama

Terasaki

Takada

et al. 2000

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

Deblocking reaction mechanisms of two kinds of chemically amplified resist systems were studied using the in-situ FT-IR measurement system. From the measured results, photoacid generation reaction constants, deblocking reaction orders for the acid concentration and deblocking reaction rate constants were estimated. In the case of 1-ethoxyethyl group, the deblocking reaction order for the acid concentration was very small (104). The activation energies of the deblocking reactions in an acetal type resist and a tBoc type resist were calculated from the Arrhenius plots of deblocking reaction constants and these values were agreeable with the results of molecular orbital calculations.

show abstract

Section: Introductionmentioning

confidence: 99%

Novel Analysis of Deblocking Reaction in DUV Resists.

Kameyama

Terasaki

Takada

et al. 2000

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…9 First, the photoacid generator generates acid under exposure to light. The latent image is the dose distribution in the resist that determines the dissolution rate.…”

Section: Model and Assumptionsmentioning

confidence: 99%

Effects of resist thickness and thin-film interference in I-line and deep ultraviolet optical lithography

Xiao¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inAg2Te/As2S3: A high-contrast, top-surface imaging resist for 193 nm lithography J.A heavy ion implanted pocket 0.10 μm n-type metal-oxide-semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process As the resolution of optical lithography reaches 0.35 m and below, linewidth can no longer be predicted by aerial image alone. Accordingly, we incorporate thin-film interference within the resist/substrate stack and postexposure bake diffusion effects in our latent image formation model. The impact of resist thickness and antireflective coatings on optical proximity effect and process latitude has been examined. Taking various optical effects into account, our simulation matches the experimental data very well. Using the enhanced simulation tool, we have studied the practical process window and possible enhancement techniques.

show abstract

“…Other reaction models have also been proposed [3,4] and should lead to similar analysis as they were fit to data which shows similar deprotection and acid loss.…”

mentioning

confidence: 93%

<title>Reaction diffusion kinetics in deep-UV positive-tone resist systems</title>

1995

View full text Add to dashboard Cite

This paper examines the effects of latent acid formation and acid diffusion into dark regions of images in determining resist behavior during post exposure bake. Results of two new experiments, consisting of diffusion from an exposed into an unexposed resist film, the deliberate introduction of flare in patterned exposures, and reexamination of FTIR measurements of flood and patterned exposed samples show that a sharp diffusion front is the dominant mechanism determining resist image formation with post exposure bake times, and similar front velocities of 33nm/min, 35 nm/mm, and 3 mm/mm were obtained for each experiment respectively. In addition, quantitative modeling of toploss in unexposed samples due to acid diffusion from a top-totop contact bake with an exposed sample show that Fickean diffusion cannot account for the experimental observations and suggest deprotection dependent diffusion fronts in positive DUV resists are important in modeling lithographic performance.Introduction:

show abstract

<title>Dissolution rate modeling of a chemically amplified positive resist</title>

Cited by 14 publications

References 0 publications

Novel Analysis of Deblocking Reaction in DUV Resists.

Novel Analysis of Deblocking Reaction in DUV Resists.

Effects of resist thickness and thin-film interference in I-line and deep ultraviolet optical lithography

<title>Reaction diffusion kinetics in deep-UV positive-tone resist systems</title>

Contact Info

Product

Resources

About