&lt;title&gt;Dielectric and chemical characteristics of electron-beam-cured photoresist&lt;/title&gt;

Sison, Ernesto S.; Rahman, M. Dalil; Durham, Dana L.; Hermanowski, James; Ross, Matthew F.; Jennison, Michael J.

doi:10.1117/12.210393

Cited by 7 publications

(4 citation statements)

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“…Sison et al 28 reported that the crosslinking mechanism in photoresists involve the interaction between the DNQ and the novolak resin, or, interaction of the novolak resin by itself.…”

Section: Resultsmentioning

confidence: 99%

Optimized Deep UV Curing Process for Metal-Free Dry-Etching of Critical Integrated Optical Devices

Sengo

Wolferen

Driessen

2011

J. Electrochem. Soc.

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In this paper we present results of Deep UV-curing of resist followed by thermal treatment at temperatures up to 280 C. The curing process was optimized for positive resist profiles of Fujifilm with thicknesses from 0.3 to 3.0 m. The procedure was for the first time employed to etch critical optical structures in silicon oxynitride. Furthermore, the effect of this resist treatment on the geometry and quality of the etched profiles in silicon, silicon oxide, silicon nitride, and silicon oxynitride, having dimensions as typically applied in integrated optical devices, was studied. Channel waveguides with steep and smooth sidewalls were realized, without usage of a metal hard mask which would reduce the optical performance, at high etch selectivity (up to 6) for the materials under investigation. The reliable fabrication of various integrated optical structures with critical dimensions, like sub-micron gaps between adjacent waveguide channels, was demonstrated.

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“…Sison et al 28 reported that the crosslinking mechanism in photoresists involve the interaction between the DNQ and the novolak resin, or, interaction of the novolak resin by itself.…”

Section: Resultsmentioning

confidence: 99%

Optimized Deep UV Curing Process for Metal-Free Dry-Etching of Critical Integrated Optical Devices

Sengo

Wolferen

Driessen

2011

J. Electrochem. Soc.

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“…Approximate dielectric constants (relative permittivities) used for modeling the media, photoresist, and silicon dioxide were 80, 4, and 4, respectively (Sears et al, 1980;Sison et al, 1995;Murray, 1997), assuming that the media and the photoresist had dielectric constants similar to that of water and other novolac-based positive photoresists, respectively. We assumed permittivity-dominated operation, as justified by both analytical calculations and the existence of the DC-blocking silicon dioxide layer.…”

Section: Modeling and Calculationsmentioning

confidence: 99%

Dielectrophoretic registration of living cells to a microelectrode array

Gray¹,

Tan²,

Voldman³

et al. 2004

Biosensors and Bioelectronics

171

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“…The PbI 2 films were prepared on Si/PEDOT:PSS because glass absorbs the IR light. In Figure 6a, characteristic peaks related to the C=O stretching were found around 1715 cm −1 [22]. According to the literature, the C=O vibration shifts to lower frequency around 1650 cm −1 for DMF, which forms Lewis adducts due to the reaction of the PbI 2 layer [23,24].…”

Section: Resultsmentioning

confidence: 99%

Improving Two-Step Prepared CH3NH3PbI3 Perovskite Solar Cells by Co-Doping Potassium Halide and Water in PbI2 Layer

Cheng

Leu

et al. 2019

Nanomaterials

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Incorporating additives into organic halide perovskite solar cells is the typical approach to improve power conversion efficiency. In this paper, a methyl-ammonium lead iodide (CH3NH3PbI3, MAPbI3) organic perovskite film was fabricated using a two-step sequential process on top of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) hole-transporting layer. Experimentally, water and potassium halides (KCl, KBr, and KI) were incorporated into the PbI2 precursor solution. With only 2 vol% water, the cell efficiency was effectively improved. Without water, the addition of all of the three potassium halides unanimously degraded the performance of the solar cells, although the crystallinity was improved. Co-doping with KI and water showed a pronounced improvement in crystallinity and the elimination of carrier traps, yielding a power conversion efficiency (PCE) of 13.9%, which was approximately 60% higher than the pristine reference cell. The effect of metal halide and water co-doping in the PbI2 layer on the performance of organic perovskite solar cells was studied. Raman and Fourier transform infrared spectroscopies indicated that a PbI2-dimethylformamide-water related adduct was formed upon co-doping. Photoluminescence enhancement was observed due to the co-doping of KI and water, indicating the defect density was reduced. Finally, the co-doping process was recommended for developing high-performance organic halide perovskite solar cells.

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<title>Dielectric and chemical characteristics of electron-beam-cured photoresist</title>

Cited by 7 publications

References 0 publications

Optimized Deep UV Curing Process for Metal-Free Dry-Etching of Critical Integrated Optical Devices

Optimized Deep UV Curing Process for Metal-Free Dry-Etching of Critical Integrated Optical Devices

Dielectrophoretic registration of living cells to a microelectrode array

Improving Two-Step Prepared CH3NH3PbI3 Perovskite Solar Cells by Co-Doping Potassium Halide and Water in PbI2 Layer

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