&lt;title&gt;Developments of CCDs and relevant electronics for the x-ray CCD camera of the MAXI experiment onboard the International Space Station&lt;/title&gt;

Miyata, Emi; Natsukari, Chikara; Kamazuka, Tomoyuki; Kouno, Hiroyuki; Tsunemi, H.; Matsuoka, M.; Tomida, H.; Ueno, S.; Hamaguchi, Kenji; Tanaka, Isao

doi:10.1117/12.454224

Cited by 10 publications

(17 citation statements)

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“…They used a 12 MeV proton beam and reported degradation similar to that in our results at the fluence of 10 protons cm . We confirmed that a 3.9 MeV proton beam requires about two orders of magnitude greater fluence than a 391 keV proton beam to degrade the CCD to the same level [13]. Therefore, the fluence of the radiation hardness strongly depends on the proton energy.…”

Section: A Selection Of the Proton Energysupporting

confidence: 66%

Application of a mesh experiment for a proton beam onto the charge-coupled device

Tsunemi

Miki

Miyata

2004

IEEE Trans. Nucl. Sci.

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Radiation hardness is one of the most important characteristics in a space-borne instrument, particularly imaging devices. The charge-coupled device (CCD) is now used in the X-ray region. A "notch" structure inside the CCD is widely employed to make it radiation hard. Using a proton beam, we confirmed that the notch structure improved the charge transfer inefficiency (CTI) by a factor of three. We applied a mesh technique in the proton beam experiment of a CCD. The proton beam energy is 600 keV, which induces greater damage than do the beam of high energy widely reported. The CCD employed has 1024 1024 pixels with a notch structure. The mesh technique enables us to confine the proton beam to a circular region of 2 m diameter within a 24 24 m 2 pixel. The CCD was kept at 100 C during the irradiation. Some pixels are damaged in the notch region while others in the out-of-notch region. After the proton irradiation, we measured the CTI using 2 10 7 X-ray photons from 55 Fe, and found that the CTI of pixels damaged in the notch region is larger by a factor of 2.5 than that of pixels damaged in the out-of-notch region. It is still in open question as to whether pixels damaged in the out-of-notch region show a substantial radiation damage effect.

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Section: A Selection Of the Proton Energysupporting

confidence: 66%

Application of a mesh experiment for a proton beam onto the charge-coupled device

Tsunemi

Miki

Miyata

2004

IEEE Trans. Nucl. Sci.

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“…Details about newly-developed devices have been described in Miyata et al 11) Devices fabricating from epitaxial wafer and from bulk wafer were tested. We have decided to employ devices from epitaxial wafer in order to achieve the high energy resolution, high quantum efficiency for hard X-rays, and also low dark current.…”

Section: )mentioning

confidence: 99%

“…12) The CCD analog data were processed by an integration-type circuit 11) and digital data were acquired with a VME system. The readout noise of our system including the device is less than 10 e − rms under the charge transfer rate of 125 kHz.…”

Section: Experimental Setup and Beam Calibrationmentioning

confidence: 99%

Proton Irradiation Experiment for X-ray Charge-Coupled Devices of the Monitor of All-Sky X-ray Image Mission Onboard the International Space Station: I. Experimental Setup and Measurement of the Charge Transfer Inefficiency

Miyata

Kamazuka

Kouno

et al. 2002

Jpn. J. Appl. Phys.

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We have investigated the radiation damage effects on a CCD to be employed in the Japanese X-ray astronomy mission including the Monitor of All-sky X-ray Image (MAXI) onboard the International Space Station (ISS). Since low energy protons release their energy mainly at the charge transfer channel, resulting a decrease of the charge transfer efficiency, we thus focused on the low energy protons in our experiments. A 171 keV to 3.91 MeV proton beam was irradiated to a given device. We measured the degradation of the charge transfer inefficiency (CTI) as a function of incremental fluence. A 292 keV proton beam degraded the CTI most seriously. Taking into account the proton energy dependence of the CTI, we confirmed that the transfer channel has the lowest radiation tolerance. We have also developed the different device architectures to reduce the radiation damage in orbit. Among them, the "notch" CCD, in which the buried channel implant concentration is increased, resulting in a deeper potential well than outside, has three times higher radiation tolerance than that of the normal CCD. We then estimated the charge transfer inefficiency of the CCD in the orbit of ISS, considering the proton energy spectrum. The CTI value is estimated to be 1.1 × 10 −5 per each transfer after two years of mission life in the worse case analysis if the highest radiation-tolerant device is employed. This value is well within the acceptable limit and we have confirmed the high radiation-tolerance of CCDs for the MAXI mission.

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“…We operated the SD-BICCD with MiKE system which is developed for operation of conventional CCDs and possesses low noise characteristics. The analog data were processed by an integrated correlated double-sampling circuit [12] which is also developed for conventional CCDs. A readout noise level of 5e À including the SD-BICCD was achieved.…”

Section: Methodsmentioning

confidence: 99%

Wide-band imaging spectrometer with scintillator-deposited charge-coupled device

Miyata

Anabuki

Mukai

et al. 2006

Nuclear Instruments and Methods in Physics Research Section A:

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<title>Developments of CCDs and relevant electronics for the x-ray CCD camera of the MAXI experiment onboard the International Space Station</title>

Cited by 10 publications

References 0 publications

Application of a mesh experiment for a proton beam onto the charge-coupled device

Application of a mesh experiment for a proton beam onto the charge-coupled device

Proton Irradiation Experiment for X-ray Charge-Coupled Devices of the Monitor of All-Sky X-ray Image Mission Onboard the International Space Station: I. Experimental Setup and Measurement of the Charge Transfer Inefficiency

Wide-band imaging spectrometer with scintillator-deposited charge-coupled device

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