&lt;title&gt;Design of an APS CMOS image sensor for space applications using standard CAD tools and CMOS technology&lt;/title&gt;

Goy, J.; Courtois, B.; Karam, J.M.; Pressecq, F.

doi:10.1117/12.382275

Cited by 9 publications

(6 citation statements)

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“…It immediately follows that the active layer doping must be approximately 10 14 cm −3 to 10 15 cm −3 , values which can be found for several triple well modern CMOS technologies [9][10][11]. The active layer can be either an epitaxial layer or a lowly doped substrate.…”

Section: The Tfd Basic Working Principlementioning

confidence: 98%

Further developments on a novel color sensitive CMOS detector

Langfelder

Longoni

Zaraga

2009

Optical Sensors 2009

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The Transverse Field Detector (TFD) is a recently proposed Silicon pixel device designed to perform color imaging without the use of color filters. The color detection principle is based on the dependence of the Silicon absorption coefficient from the wavelength and relies on the generation of a suitable transverse electric field configuration, within the semiconductor active layer, to drive photocarriers generated at different depths towards different collecting electrodes. Each electrode has in this way a different spectral response with respect to the incoming wavelength. Pixels with three or four different spectral responses can be implemented within ~ 6 μm of pixel dimension. Thanks to the compatibility with standard triple well CMOS processes, the TFD can be used in an Active Pixel Sensor exploiting a dedicated readout topology, based on a single transistor charge amplifier. The overall APS electronics includes five transistors (5T) and a feedback capacitance, with a resulting overall fill factor around 50%. In this work the three colors and four colors TFD pixel simulations and implementations in a 90 nm standard CMOS triple well technology are described. Details on the design of a TFD APS mini matrix are provided and preliminary experimental results on four colors pixels are presented.

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Section: The Tfd Basic Working Principlementioning

confidence: 98%

Further developments on a novel color sensitive CMOS detector

Langfelder

Longoni

Zaraga

2009

Optical Sensors 2009

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“…Nevertheless FAMOSI 2 uses a N well /P epi photodiode for having a better spectral sensitivity. 6 The RPD and RR transistors reset the photodiode and the readout floating node, respectively. The time for resetting the photodiode must be extremely short.…”

Section: Architecture Of the Pixelmentioning

confidence: 99%

A fast high-resolution CMOS imager for nanosecond light pulse detections

Morel

Normand

Zint³

et al. 2004

SPIE Proceedings

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Nowadays, imagers based on CMOS active pixel sensors (APS) have performances that are competitive with those based on charge-coupled devices (CCD). CMOS imagers offer advantages in on-chip functionalities, system power reduction, cost and miniaturisation. The FAst MOS Imager (FAMOSI) project consists in reproducing the streak camera functionality with a CMOS imager. In this paper, we present the second version of FAMOSI which makes up for the drawbacks of the first one. FAMOSI 2 has a new architecture of pixel which implements an electronic shutter and analogue accumulation capabilities. With this kind of pixel and the new architecture for controlling the integration, FAMOSI 2 can work in the low power repetitive synchroscan mode. The prototype has been fabricated in the AMS 0.35µm CMOS process. The chip is composed of 64 columns per 64 rows of pixels. The pixels have a size of 20µm per 20µm and a fill factor of 47%.The simulation shows that a conversion gain of 3.4µV/e -is obtained with a dynamic range of 1.2V, a time resolution of 400ps and a light pulse repetitive rate of 300kHz.

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“…The gain of the MCP is 10 5 -10 6 , the amplified current is described by the formula [6][7][8][9][10][11][12][13][14].…”

Section: Methodsmentioning

confidence: 99%

Method of Elimination of the Residual Lumination of the Luminescent Covering of Screen

Marina¹,

Narkiza²,

K³

et al. 2017

J Laser Opt Photonics

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In the laboratory of physics and general technical disciplines of the Ugra State University, an optoelectronic measuring system based on a high-speed Video Sprint video camera is used for research. The calibration of ECO has revealed a number of nonlinear effects. In the paper, a method is described that allows eliminating the afterglow of the screen of the image converter. The method is based on revealing the law of attenuation of the afterglow of a phosphor. As a result of the application, data loss is reduced, the signal-to-noise ratio is increased.

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<title>Design of an APS CMOS image sensor for space applications using standard CAD tools and CMOS technology</title>

Cited by 9 publications

References 0 publications

Further developments on a novel color sensitive CMOS detector

Further developments on a novel color sensitive CMOS detector

A fast high-resolution CMOS imager for nanosecond light pulse detections

Method of Elimination of the Residual Lumination of the Luminescent Covering of Screen

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