&lt;title&gt;Design of a large-format charge-injection-device imager for spectroscopy&lt;/title&gt;

Eid, El-Sayed I.; Zarnowski, Jeffrey J.; Arnold, Frank S.; Carbone, Joseph

doi:10.1117/12.135930

SPIE Proceedings

1992

DOI: 10.1117/12.135930

|View full text |Cite

<title>Design of a large-format charge-injection-device imager for spectroscopy</title>

El-Sayed I. Eid¹,

Jeffrey J. Zarnowski²,

Frank S. Arnold³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1995

Publication Types

Select...

Other1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The signal charge injection takes place by biasing IG to approximately VSS, and turning QRD off and QRS on such that FG is approximately VSS. The reverse-biased p-n junction can be a buried (vertical) one such as that of a charge injection device (OlD), see, for example, [4]. In this case, the substrate material on which the active pixel is built must be of opposite type to that of the epitaxial layer.…”

mentioning

confidence: 99%

Pre-amplifier per pixel charge injection device image sensor

Eid

1995

SPIE Proceedings

View full text Add to dashboard Cite

High read-out noise has been the primary limitation to the performance of charge injection device (CID) image sensors. This is due to the inherent high read-out node capacitance of the conventional OlD image sensor architecture. In a conventional row read-out CID image sensor architecture, all rows of the pixel array are connected to a multiplexer. An output amplifier is integrated at the output of the multiplexer. The read-out node capacitance is the combination of the row and the multiplexer buses capacitances. This read-out node capacitance is in the order of magnitude of few to several pF, which yields an rms read-out-noise in the order of several hunderds to a thousand electrons. The pre-amplifier per row (PPR) architecture was introduced to reduce the readout node capacitance and consequently the read-out noise. In this architecture, an amplifier is dedicated to and integrated at the end of each row of the pixel array. The row bus is de-coupled from the multiplexer bus and the read-out node capacitance is reduced to that of the row bus. This read-out node capacitance is in the order of magnitude of one pF, which yields an rms readout noise in the order of few hunderds electrons.In this paper, a new OlD image sensor architecture, pre-amplifier per pixel (PPP), will be presented. In this architecture, an amplifier is dedicated to and integrated within each pixel of the image sensor array. The read-out node for a pixel design employing this architecture is local to its pixel and buffered from any other read-out nodes within the image sensor pixel array. Thus, the capacitance of the read-out node in this design is significantly reduced, resulting in significant improvements of read-out sensitivity and noise. This architecture reduces the read-out node capacitance to an order of magnitude of few tens of fF, which yields an rms read-out noise in the order of few tens of electrons. This brings the CID imaging technology to the main stream of readout noise levels of other solid-state imaging technologies. This is achieved without compromising the traditional strengths of CID imaging technology such as non-destructive read-out, resistance to blooming, radiation hardness, and random-accessibility. The only compromise is the pixel fill-factor. Depending on the minimum process feature size and the pixel size, the pixel fill-factor can be higher than 50%. A test chip has been designed and fabricated. Evaluation of this test chip is presented. 292 / SP1E Vol. 2415 O-8194-1762-9/95/$6.OO Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/20/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

show abstract

mentioning

confidence: 99%

Pre-amplifier per pixel charge injection device image sensor

Eid

1995

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

<title>Design of a large-format charge-injection-device imager for spectroscopy</title>

Cited by 1 publication

References 0 publications

Pre-amplifier per pixel charge injection device image sensor

Pre-amplifier per pixel charge injection device image sensor

Contact Info

Product

Resources

About