<title>Consideration on the resolution limit of the resist silylated process</title>

Abstract

In order to find out the factors determining the resolution on the resist silylated process, we evaluated factors for each stage of pattern generation process. It is found that the silylated layer is formed as a result of the light energy distribution.Moreover, it can be explained that side etching brought about the degradation of vertical etching rate in fine slits (micro-loading effect).This micro-loading effect degrades the resolution slightly.Using a condition with minimized micro-loading effect, we obtained patterns with near vertical sidewall and with small linewidth difference between packed and isolated 1 ines.