&lt;title&gt;Advanced e-beam lithography system in producing high-quality reticle for 64M-DRAM&lt;/title&gt;

Kawasaki, Kenji; Nakamura, Kazumitsu; Matsuzaka, Takashi; Ohta, Hiroya; Saitou, Norio; Kohno, Toshihiko; Hoga, Morihisa

doi:10.1117/12.56937

Cited by 4 publications

(2 citation statements)

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“…Strategy for development of higher precision system is (1) to make minimum address unit fine, (2) to minimize error of beam correction functions and (3) to make environmental controls more efficient. The minimum address unit was changed to 0.0125 j.tm from 0.025 tm in HL-700M and the minimum measurement unit of stage position was changed to A/120 (0.005 tm) from A/80.…”

Section: System Descriptionmentioning

confidence: 99%

“…The optical column swings by the step-and-repeat stage movement and the effect of stabilization of reticle plate temperature were also discussed. In this paper, (1) new dynamic focus and astigmatism correction, (2) design of the anti-vibration column and the rigid working chamber and (3) control of the reticle temperature will be discussed.…”

Section: Introductionmentioning

confidence: 99%

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Electron-beam lithography system for high-precision reticle making

Matsuzaka

Ohta

Saitou

et al. 1992

Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II

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A high precision electron beam lithography system which can be used to make reticles for 0.3 p.m devices has been developed. This system is an enhanced model of the Hitachi electron beam lithography system, HL-700M. Key technologies used in this system are (1) the minimum address unit (0.0125 tm) and the stage-positioning measurement unit (0.005 p.m) to correspond with higher precision specifications, (2) the refined beam correction functions and (3) the efficient environmental controls. The items of improvement on environmental controls are to design an anti-vibration column and to adopt a reticle temperature control system.The main specifications of this system are 1) the positioning accuracy : 0.06p.m, 2) stitching accuracy : 0.05p.m, 3) pattern width accuracy : 0.05j.tm and 4) throughput : 0.5 reticle/hr. The system enables to write phase shift masks using the direct writing mode in HL-700D.

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Section: System Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electron-beam lithography system for high-precision reticle making

Matsuzaka

Ohta

Saitou

et al. 1992

Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II

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Error Analysis in Electron Beam Lithography System -Thermal Effects on Positioning Accuracy-

Ohta¹,

Matsuzaka²,

Saitou³

et al. 1992

Jpn. J. Appl. Phys.

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Thermal effects on positioning accuracy in an electron beam lithography system have been evaluated. In order to make 5X reticles for 0.3-µm ULSIs, positioning accuracy as small as 0.06 µm is required. Thermal effects are significant problems in achieving highly accurate reticle judging from positioning error analysis. In this study, internal thermal effects were investigated; these were (1) heating by electron beam illumination and (2) stage friction with step-and-repeat movement. As a result, the positioning error due to electron beam illumination is negligibly small compared with 0.06 µm and the stage temperature fluctuation must be controlled within 0.07°C to maintain a positioning error within 0.06 µm. Furthermore, internal thermal effects of the system could be fatal in next-generation electron beam lithography systems without improvement of materials and systems.

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The Requirements for Future Electron-Beam Reticle Fabrication Systems from an Error Analysis Viewpoint

Matsuzaka¹,

Ohta²,

Saitou³

et al. 1993

Jpn. J. Appl. Phys.

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A very low reflectivity of the order of 10 −4 is demonstrated for dual-layer anti-reflection coatings on normal facet semiconductor lasers, by integrated in situ monitoring. The method has been tested on three and eight quantum-well InGaAsP ridge lasers that consist of a gain section and an integrated absorber section. The principle is to monitor the change in the photocurrent generated in the absorber that is proportional to the output optical intensity from the laser, which changes as the coating progresses.

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<title>Advanced e-beam lithography system in producing high-quality reticle for 64M-DRAM</title>

Cited by 4 publications

References 0 publications

Electron-beam lithography system for high-precision reticle making

Electron-beam lithography system for high-precision reticle making

Error Analysis in Electron Beam Lithography System -Thermal Effects on Positioning Accuracy-

The Requirements for Future Electron-Beam Reticle Fabrication Systems from an Error Analysis Viewpoint

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