2008
DOI: 10.2320/matertrans.mra2008068
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<I>In Situ</I> Observation of Diamond Gasification and the Crystallographic Relationship of Graphite Formed on the Surface of Diamond

Abstract: Recently, a property of diamond as a semiconductor is focused on by many researchers. For the mass production, it is important to develop the manufacturing process. As it is thought that the ionic milling process has limitations, the application of gasification reactions with oxidizing gases such as CO 2 , H 2 O and O 2 is the best option.In this study, reaction behaviors of diamond at temperatures of more than 1273 K were investigated under a wide range of oxygen potentials, and the crystallographic relations… Show more

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(6 citation statements)
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“…Figure 2(c) shows the image from the optical microscope after the experiment at 1773 K under an argon atmosphere (P O2 < 20 ppm). The slightly oxidized surface, which was confirmed as a kind of graphite layer, 8) can be observed. Figure 2(d) shows the diamond image after the experiment at 1473 K under Ar-30 vol%CO 2 for 1800 s. The gasification degree seen in Fig.…”
Section: Sample Servedmentioning
confidence: 66%
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“…Figure 2(c) shows the image from the optical microscope after the experiment at 1773 K under an argon atmosphere (P O2 < 20 ppm). The slightly oxidized surface, which was confirmed as a kind of graphite layer, 8) can be observed. Figure 2(d) shows the diamond image after the experiment at 1473 K under Ar-30 vol%CO 2 for 1800 s. The gasification degree seen in Fig.…”
Section: Sample Servedmentioning
confidence: 66%
“…16. As mentioned above and in reference, 8) the original diamond surface had many triangular defects consisting of {111}. When the surface was gasified, a pit formed at the center of the triangle as shown in Fig.…”
Section: Sem Observation Of the Surface After Gasificationmentioning
confidence: 94%
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