LPE Growth of  ( Nd ,  Y  )  P 5 O 14 Layers from Tin Melt

Abstract

Metal fluxes such as Ga, In, and Sn are developed for liquid phase epitaxial growth of rare earth ultraphosphates in place of phosphoric acid flux. Solubility curves of NdP5O14 for these fluxes are obtained. Using a tin flux, false(normalNd,Yfalse)P5O14 layers having a few to twenty microns thickness are successfully grown both on the (100)‐oriented NdP5O14 and (001)‐oriented Gd0.33Y0.67P5O14 substrates. A preliminary growth mechanism is also reported.