LPCVD process simulation based on Monte Carlo method

Abstract

Mechanisms during low pressure deposition (LPCVD) process in Micro-Electro-Mechanical Systems (MEMS) and Integrated Circuits (IC) fabrication have been analyzed. The LPCVD process has then been successfully simulated based on the re-emission models with Monte Carlo method and the Lagrangian method (shorthand denoted as L-type method) for boundary movement simulation. Simulation results show an agreement with the available experimental results. This is useful for the research of LPCVD process and the development of MEMS and IC design.

Study of PSG Thickness Uniformity Influencing Factors in LPCVD

“…It is easier to obtain PSG film with better thickness uniformity, since diffusion coefficient of gas increases dramatically with the decrease of pressure, making reactants and by-products diffuse faster.In essence，the process of LPCVD is a kind of gas phase transportation and reaction which includes reacting gas flow, diffuse and a series of surface chemical reaction [4]. Since gas diffusion coefficient is big under low pressure, the deposition process is mainly dominated by diffusion mechanism which could be explained by Monte Carlo method [5]. In fact, the direct flux is not completely isotropic and the supplementary reacting gas flow will also affect the thickness uniformity of deposited film.…”