Abstract:A dilute chlorine trifluoride gas at less than 1% was possible for the cleaning of a silicon carbide chemical vapor deposition (CVD) reactor. For 20 minutes, the chlorine trifluoride gas at the concentrations of 0.5 - 1 % in ambient nitrogen at atmospheric pressure could detach the 30-m-thick particle-type polycrystalline silicon carbide CVD film from the susceptor which had a coating film made of a purified pyrolytic carbon (PPyC). While the PPyC film had some damage due to the shallow fluorine diffusion, it… Show more
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