Low Voltage Symmetric Dual-Gate Organic Field Effect Transistor

Abstract

Dual-gate organic field effect transistors (DG-OFETs), where two separate channels are formed at the organic semiconductor-dielectric interface, have attracted much attention owning to their high performance in comparison to single-gate OFET (SG-OFET). In this paper, an organic module of Atlas device simulator for a low voltage SG-OFET has been used to predict the electrical characteristics and performance parameters. Thereafter, an additional dielectric and gate electrode has been introduced to SG-OFET to achieve better performance. Electrical behaviors of low-voltage (≤ 3 V) DG-OFET have been studied by employing a symmetric configuration. This architecture exhibits a high drive current due to injection of sufficient charge carriers in both channels. The simulation results show higher drive current, carrier mobility and current on-off ratio, lower threshold voltage and subthreshold slope. These results demonstrate that the proposed symmetric configuration provide better performance when compared to the single gate.