Low‐Voltage Ring Oscillators Based on Polyelectrolyte‐Gated Polymer Thin‐Film Transistors

Herlogsson, Lars; Cölle, Michael; Tierney, Steve; Crispin, Xavier; Berggren, Magnus

doi:10.1002/adma.200901850

Cited by 75 publications

(60 citation statements)

References 34 publications

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“…The switching speed of the NCIC ring oscillator, which successfully operates at desired low-supply voltages, is comparable to other emerging solution-processable materials with similar channel lengths (40 mm) and low-voltage operation 31,32 , suggesting that colloidal semiconductor NC inks form a promising class for low-cost, thin-film analogue and digital electronics. The switching speeds is sufficient for sensor and display applications [33][34][35] .…”

Section: Discussionmentioning

confidence: 85%

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

et al. 2012

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Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from highperformance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm 2 V À 1 s À 1 , current modulation 410 6 and subthreshold swing of 0.28 Vdec À 1 . We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

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Section: Discussionmentioning

confidence: 85%

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

et al. 2012

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“…Meanwhile, their relatively harsh and complicated fabrication processes prevent large‐scale manufacture of flexible OFETs 25. Recently, incorporation of thick polyelectrolytes as dielectrics was demonstrated to be an alternative method to fulfill high capacitance and thus low‐voltage operation of OFETs 28, 29, 30. Despite these interesting merits, polyelectrolyte materials have severe disadvantages of large leakage current, high hysteresis, and poor stability,31 which largely limit their utilizations in OFETs, particularly for the OFET‐based pressure sensors.…”

Section: Introductionmentioning

confidence: 99%

Solution‐Processed Bilayer Dielectrics for Flexible Low‐Voltage Organic Field‐Effect Transistors in Pressure‐Sensing Applications

Yin

Liu

et al. 2018

Advanced Science

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Flexible pressure sensors based on organic field‐effect transistors (OFETs) have emerged as promising candidates for electronic‐skin applications. However, it remains a challenge to achieve low operating voltages of hysteresis‐free flexible pressure sensors. Interface engineering of polymer dielectrics is a feasible strategy toward sensitive pressure sensors based on low‐voltage OFETs. Here, a novel type of solution‐processed bilayer dielectrics is developed by combining a thick polyelectrolyte layer of polyacrylic acid (PAA) with a thin poly(methyl methacrylate) (PMMA) layer. This bilayer dielectric can provide a vertical phase separation structure from hydrophilic interface to hydrophobic interface which adjoins well to organic semiconductors, leading to improved stability and remarkably reduced leakage currents. Consequently, OFETs using the PMMA/PAA dielectrics reveal greatly suppressed hysteresis and improved mobility compared to those with a pure PAA dielectric. Using the optimized PMMA/PAA dielectric, flexible OFET‐based pressure sensors that show a record high sensitivity of 56.15 kPa−1 at a low operating voltage of −5 V, a fast response time of less than 20 ms, and good flexibility are further demonstrated. The salient features of high capacitance, good dielectric performance, and excellent reliability of the bilayer dielectrics promise a bright future of flexible sensors based on low‐voltage OFETs for wearable electronic applications.

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“…Very recently, unipolar, p-type electrolyte-gated ring oscillator circuits have been demonstrated that indeed operate at very low supply voltages (brown symbols), but the shortest delay times were 200 s for devices with rather short (2.5 m) channel lengths. 33,34 Thus, a major challenge for printed electronics is to develop inks and printing methodologies that allow shorter delay times at low supply voltages, that is, to move further into the pink shaded region of Figure 1a. Single semiconducting carbon nanotubes are known to exhibit very high intrinsic mobility (ϳ100 000 cm 2 /V · s) 36 and consequently can be incorporated in high-frequency (short delay time) devices.…”

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confidence: 99%

Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

et al. 2010

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Expanding applications for microelectronics in large-area sensor arrays, disposable sensor tapes, timeϪtemperature smart labels, radio frequency identification tags, and roll-up displays 1Ϫ4 motivate efforts to integrate electronics onto flexible plastic, paper, or metal substrates. A principal strategy for achieving flexible electronics is to employ graphic arts methods such as flexographic or ink-jet printing to pattern metallic, semiconducting, and insulating inks onto foils and paper. 5Ϫ10 Liquid phase printing offers the potential for high-throughput roll-toroll or sheet-to-sheet processing of electronics on large-area substrates, facilitating applications where large areas are necessary (e.g., displays) and also potentially translating into low production cost. Yet the challenge for printed electronics is to achieve high-performance circuits. The inherently low carrier mobilities of many printable organic or nanoparticle-based semiconductors lead to reduced transistor switching frequencies and high circuit supply voltages. Alternative strategies in which silicon chips are bonded to flexible substrates (by transfer printing or pick-andplace methods) are also attractive because they benefit from the superior electronic properties of silicon and the very advanced state of silicon microelectronics technology.11 In a competitive environment, the success of liquid phase printed electronics depends on substantial performance improvements, in particular, the development of faster, lower power printed circuits. Figure 1a displays a summary of reported signal delay times versus supply voltages for ring oscillator circuits based on organic semiconductors and carbon nanotube (CNT) arrays. It is evident that for nonprinted organic ring oscillators (open blue symbols) signal delays of 1Ϫ10 s have been achieved but only for supply voltages of 10Ϫ100 V, 12Ϫ24 while for supply voltages in the range of 4Ϫ10 V, the delay is above 10 s for the fastest circuits, with most displaying Ͼ1 ms switching times.25Ϫ28 Reports of printed ring oscillators are less common (solid green symbols in Figure 1a), and these circuits have generally required tens of volts to achieve switching times on the order of 1 ms.29Ϫ32 Such large voltages are not practical for many potential applications of flexible electronics where power will be supplied by thin-film batteries or radio frequency fields. Very recently, unipolar, p-type electrolyte-gated ring oscillator circuits have been demonstrated that indeed operate at very low

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Low‐Voltage Ring Oscillators Based on Polyelectrolyte‐Gated Polymer Thin‐Film Transistors

Cited by 75 publications

References 34 publications

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

Solution‐Processed Bilayer Dielectrics for Flexible Low‐Voltage Organic Field‐Effect Transistors in Pressure‐Sensing Applications

Printed, Sub-3V Digital Circuits on Plastic from Aqueous Carbon Nanotube Inks

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