Abstract:We report on p- and n-type organic self-assembled monolayer field effect transistors. On the base of quaterthiophene and fullerene units, multifunctional molecules were synthesized, which have the ability to self-assemble and provide multifunctional monolayers. The self-assembly approach, based on phosphonic acids, is very robust and allows the fabrication of functional devices even on larger areas. The p- and n-type transistor devices with only one molecular active layer were demonstrated for transistor chann… Show more
“…[ 12 , 13 ] Progress on fabricating n-type SAMFETs has been reported. [ 14 ] A semiconducting fullerene based monolayer molecules compared to the chlorosilanes previously reported [ 9 ] are easier handling, storage and device fabrication as they are environmentally stable.…”
This work describes n‐type self‐assembled monolayer field‐effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N‐type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n‐type and p‐type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.
“…[ 12 , 13 ] Progress on fabricating n-type SAMFETs has been reported. [ 14 ] A semiconducting fullerene based monolayer molecules compared to the chlorosilanes previously reported [ 9 ] are easier handling, storage and device fabrication as they are environmentally stable.…”
This work describes n‐type self‐assembled monolayer field‐effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N‐type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n‐type and p‐type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.
“…These films can be incorporated as active layers in thin film transistors, so called self-assembled monolayer field-effect transistors (SAMFETs). [15][16][17][18][19][20] In these devices with real 2D-confined channels, the morphology is of particular interest, as small perturbations in the packing of the molecules, immediately strongly influence the transport properties in the transistor. This, on the other hand means that SAMFETs are an ideal tool to investigate thin film morphologies on the sub-nanometre scale in functionalized self-assembled monolayers.…”
The control of order in organic semiconductor systems is crucial to achieve desired properties in electronic devices. We have studied the order in fullerene functionalized self-assembled monolayers by mixing the active molecules with supporting alkyl phosphonic acids of different chain length. By adjusting the length of the molecules, structural modifications of the alignment of the C 60 head groups within the SAM can be tuned in a controlled way. These changes on the sub-nanometre scale were analysed by grazing incidence X-ray diffraction and X-ray reflectivity. To study the electron transport properties across these layers, self-assembled monolayer field-effect transistors (SAMFETs) were fabricated containing only the single fullerene monolayer as semiconductor. Electrical measurements revealed that a high 2D crystalline order is not the only important aspect. If the fullerene head groups are too confined by the supporting alkyl phosphonic acid molecules, defects in the crystalline C 60 film, such as grain boundaries, start to strongly limit the charge transport properties. By close interpretation of the results of structural investigations and correlating them to the results of electrical characterization, an optimum chain length of the supporting alkyl phosphonic acids in the range of C 10 was determined. With this study we show that minor changes in the order on the sub-nanometre scale, can strongly influence electronic properties of functional self-assembled monolayers.
“…In many instances, a convenient way for tuning the characteristics of such interfaces is by using molecular (mono)layers. These can even adopt the role of functional elements in devices, for example, in highly efficient organic monolayer transistors1, 2 or as self‐assembled monolayer (SAM) based devices in the field of molecular electronics 3, 4, 5, 6, 7, 8, 9, 10, 11. The spatial localization and energetics of the electronic states in these layers play a crucial role, as the states serve as “channels” for the electrical current 12, 13.…”
Controlling the nature of the electronic states within organic layers holds the promise of truly molecular electronics. To achieve that we, here, develop a modular concept for a versatile tuning of electronic properties in organic monolayers and their interfaces. The suggested strategy relies on directly exploiting collective electrostatic effects, which emerge naturally in an ensemble of polar molecules. By means of quantum‐mechanical modeling we show that in this way monolayer‐based quantum‐cascades and quantum‐well structures can be realized, which allow a precise control of the local electronic structure and the localization of electronic states. Extending that concept, we furthermore discuss strategies for activating spin sensitivity in specific regions of an organic monolayer.
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