Low-voltage organic phototransistors based on naphthyl end-capped oligothiophene nanofibers

Liu, Xuhai; Tavares, Luciana; Osadnik, Andreas; Lausen, Jens L.; Kongsted, Jacob; Lützen, Arne; Rubahn, Horst‐Günter; Kjelstrup‐Hansen, Jakob

doi:10.1016/j.orgel.2014.02.023

Cited by 27 publications

(22 citation statements)

References 37 publications

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“…The synthesis of NaT2 followed a Stille cross-coupling approach as described in Ref. 27 OTS (>90%), hexane (95% purity) and toluene (99.8% purity) were purchased from Sigma-Aldrich. The source and drain electrodes were separated by a 500 µm gap and the finger width was 20 µm.…”

Section: Methodsmentioning

confidence: 99%

Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO₂ Gate Dielectric

et al. 2018

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We report on the structure and morphology of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) films in bottom-contact organic field-effect transistors (OFETs) with octadecyltrichlorosilane (OTS) coated SiO gate dielectric, characterized by atomic force microscopy (AFM), grazing-incidence X-ray diffraction (GIXRD), and electrical transport measurements. Three types of devices were investigated with the NaT2 thin-film deposited either on (1) pristine SiO (corresponding to higher surface energy, 47 mJ/m) or on OTS deposited on SiO under (2) anhydrous or (3) humid conditions (corresponding to lower surface energies, 20-25 mJ/m). NaT2 films grown on pristine SiO form nearly featureless three-dimensional islands. NaT2 films grown on OTS/SiO deposited under anhydrous conditions form staggered pyramid islands where the interlayer spacing corresponds to the size of the NaT2 unit cell. At the same time, the grain size measured by AFM increases from hundreds of nanometers to micrometers and the crystal size measured by GIXRD from 30 nm to more than 100 nm. NaT2 on OTS/SiO deposited under humid conditions also promotes staggered pyramids but with smaller crystals 30-80 nm. The NaT2 unit cell parameters in OFETs differ 1-2% from those in bulk. Carrier mobilities tend to be higher for NaT2 layers on SiO (2-3 × 10 cm/(V s)) compared to NaT2 on OTS (2 × 10-1 × 10 cm/(V s)). An applied voltage does not influence the unit cell parameters when probed by GIXRD in operando.

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Section: Methodsmentioning

confidence: 99%

Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO₂ Gate Dielectric

et al. 2018

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“…The CsPbBr 3 nanoplatelets usually cannot retain the perfect rectangular shape after the sonic agitation, drop‐casting, and annealing process as shown in Figure d, which may lead to different contact resistances at the two CsPbBr 3 /metal electrode interfaces due to the different mechanical deterioration. The change of the contact resistance could not significantly affect the measured responsivities of CsPbBr 3 nanoplatelets, because the photogeneration of charge carriers occurs in the bulk of the material and is transported into opposite metal electrodes without energy boundaries, as illustrated in Figure b . However, the morphology modification induced surface traps and charge carrier recombination, together with the ionic transport dynamics, should play an important role to determine the performance of CsPbBr 3 devices .…”

Section: Summary Of the Performance Of Photodetectors Based On Perovsmentioning

confidence: 99%

Low‐Voltage Photodetectors with High Responsivity Based on Solution‐Processed Micrometer‐Scale All‐Inorganic Perovskite Nanoplatelets

Liu

Cao

et al. 2017

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All-inorganic photodetectors based on scattered CsPbBr nanoplatelets with lateral dimension as large as 10 µm are fabricated, and the CsPbBr nanoplatelets are solution processed governed by a newly developed ion-exchange soldering mechanism. Under illumination of a 442 nm laser, the photoresponsivity of photodetectors based on these scattered CsPbBr nanoplatelets is as high as 34 A W , which is the largest value reported from all-inorganic perovskite photodetectors with an external driven voltage as small as 1.5 V. Moreover, the rise and fall times are 0.6 and 0.9 ms, respectively, which are comparable to most of the state-of-the-art all-inorganic perovskite-based photodetectors. All the material synthesis and device characterization are conducted at room temperature in ambient air. This work demonstrates that the solution-processed large CsPbBr nanoplatelets are attractive candidates to be applied in low-voltage, low-cost, ultra highly integrated optoelectronic devices.

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“…Among these materials, the crystal growth of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) shows also a peculiar property as the molecules may form extremely high aspect ratio fibers, 20 nm thick and several micrometers long, when grown on muscovite mica, with potential in phototransistors [22] and waveguides [23]. Structures of these materials were characterized in the single crystal bulk but not in OFETs [21].…”

Section: Introductionmentioning

confidence: 99%

Structural stability of naphthyl end-capped oligothiophenes in organic field-effect transistors measured by grazing-incidence X-ray diffraction in operando

Huss-Hansen

Lauritzen

Bikondoa

et al. 2017

Organic Electronics

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. (2017) Structural stability of naphthyl end-capped oligothiophenes in organic field-effect transistors measured by grazingincidence X-ray diffraction in operando. Organic Electronics. Permanent WRAP URL:http://wrap.warwick.ac.uk/89989 Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for-profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP URL' above for details on accessing the published version and note that access may require a subscription. AbstractWe report on microstructural durability of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) in organic field effect transistors (OFETs) in operando monitored by grazing-incidence X-ray diffraction (GIXRD). NaT2 maintains its monoclinic bulk motif in operating OFETs with a = 20.31 ± 0.06Å, b = 6.00 ± 0.01Å, c = 8.17 ± 0.04Å and β = (96.64 ± 0.74)• . Crystallites appear as a mosaic of single crystals reaching through the whole 50 nm thick active layer. The lattice parameters variation (<1%) falls within the statistical error of structure refinement when the OFET gate voltage is varied from 0 V to -40 V; or when the OFET is continuously cycled within this voltage interval over more than 10 h period. Within the first few cycles, both the hole mobility and threshold voltage are changing but then reach stable levels with an average mobility of (3.25 ± 0.04) × 10 −4 cm 2 /Vs and an average threshold voltage of −13.6 ± 0.2 V, both varying less than 4% for the remainder of the 10 h period. This demonstrates crystalline stability of NaT2 in operating OFETs.

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Low-voltage organic phototransistors based on naphthyl end-capped oligothiophene nanofibers

Cited by 27 publications

References 37 publications

Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO₂ Gate Dielectric

Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO₂ Gate Dielectric

Low‐Voltage Photodetectors with High Responsivity Based on Solution‐Processed Micrometer‐Scale All‐Inorganic Perovskite Nanoplatelets

Structural stability of naphthyl end-capped oligothiophenes in organic field-effect transistors measured by grazing-incidence X-ray diffraction in operando

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Low-voltage organic phototransistors based on naphthyl end-capped oligothiophene nanofibers

Cited by 27 publications

References 37 publications

Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO2 Gate Dielectric

Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO2 Gate Dielectric

Low‐Voltage Photodetectors with High Responsivity Based on Solution‐Processed Micrometer‐Scale All‐Inorganic Perovskite Nanoplatelets

Structural stability of naphthyl end-capped oligothiophenes in organic field-effect transistors measured by grazing-incidence X-ray diffraction in operando

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Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO₂ Gate Dielectric

Structural Evaluation of 5,5′-Bis(naphth-2-yl)-2,2′-bithiophene in Organic Field-Effect Transistors with n-Octadecyltrichlorosilane Coated SiO₂ Gate Dielectric