2002
DOI: 10.1143/jjap.41.l20
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Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application

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“…AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors (p-HEMTs) are potential devices both for microwave and highspeed digital applications [1][2][3][4][5][6]. This is because of the high low-field electron mobility and high saturation velocity of electrons in the InGaAs material used for the channel.…”
Section: Introductionmentioning
confidence: 99%
“…AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors (p-HEMTs) are potential devices both for microwave and highspeed digital applications [1][2][3][4][5][6]. This is because of the high low-field electron mobility and high saturation velocity of electrons in the InGaAs material used for the channel.…”
Section: Introductionmentioning
confidence: 99%