Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application

A compact analytical I–V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model

“…AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors (p-HEMTs) are potential devices both for microwave and highspeed digital applications [1][2][3][4][5][6]. This is because of the high low-field electron mobility and high saturation velocity of electrons in the InGaAs material used for the channel.…”