Low-voltage-operating complementary inverters with C60 and pentacene transistors on glass substrates

Abstract

Organic complementary inverters with C60 and pentacene thin-film transistors (TFTs) have been fabricated on glass substrate. The inverter operated at low voltages of 1–5V. The C60 and pentacene TFTs had high field-effect mobilities of 0.68 and 0.59cm2∕Vs, and threshold voltage of 0.80 and −0.84V, respectively. The low threshold voltage enables the low voltage operation of the inverter.

High-performance n-type organic field-effect transistors with ionic liquid gates

“…The far-from-ideal performance of several n-type OFETs is due, in large part, to atmospheric oxidants such as O 2 and H 2 O, and to chemical groups present at the organicgate dielectric interface ͑e.g., hydroxyl groups in the case of the commonly used SiO 2 dielectrics͒ which act as electron traps thereby degrading transport properties. 2 Because interfacial phenomena crucially determine the device performance, 3,4 several combinations of gate dielectrics and organic semiconductors are being intensively tested [5][6][7] with the goal of optimizing n-and p-type conduction, as it is needed to achieve higher-performance complementary organic circuits.…”

Low-voltage-operating organic complementary circuits based on pentacene and C60 transistors

“…We have recently demonstrated high performance n-channel organic TFTs with field-effect mobility of~1 cm 2 /V s at an operating voltage of 5 V using an amorphous phase C 60 films [4], comparable to those of high performance p-channel pentacene TFTs with self-assembled monolayers (SAM) [5] or high dielectric constant (high-k) gate insulators [6,7]. The high mobility of n-channel TFTs yields complementary inverters and inverted-AND gates with fairly balanced operations in static characteristics [8,9].…”

Small π-conjugated organic molecules based transistor and inverter with Cu electrodes

“…The differences in charge carrier mobility are generally taken care of by adjusting the channel dimension of OFET in order to drive same current in p-and n-channel of inverter [7,8]. Efficient charge injection from the electrodes to p-channel and n-channel of inverters based on pentacene and F 16 CuPc or pentacene and C 60 require different metal electrodes [9]. Hence a process based on two step patterning of metal electrodes is required for these types of inverters.…”