Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Arakawa, Taro; Hariki, Takehiro; Amma, Yoshimichi; Ushigome, Motoki; Tada, Kunio

doi:10.7567/jjap.51.042203

Cited by 5 publications

(2 citation statements)

References 22 publications

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“…Our research group has developed photonic devices using the FACQW such as MZ modulators or switching devices for optical communications. [27][28][29][30] The proposed FACQW structure is expected to exhibit a giant differential electrorefractive index change |Δn/ΔF| as large as 4.4 × 10 −4 cm kV −1 in the range of the electric field F of −50 to −60 kV cm −1 owing to its unique QCSE. The electrorefractive index change Δn in the FACQW is expected to be several tens of times larger than that of LN and ten times larger than that of a conventional rectangular quantum well.…”

Section: Introductionmentioning

confidence: 99%

Proposal of InGaAs/InAlAs multiple quantum well Mach–Zehnder modulator integrated with array of planar antennas

Miyazeki

Arakawa

2019

Jpn. J. Appl. Phys.

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We propose an InGaAs/InAlAs multiple quantum well (MQW) Mach-Zehnder modulator integrated with an array of gap-embedded planar antennas for 60 GHz band radio-over-fiber system. The modulator enables us to directly convert from wireless millimeter-wave (MMW) signals to light-wave signals without any connection cables. A newly designed MQW for the modulator exhibits a large refractive index change at low electric field owing to its unique quantum confined Stark effect, which can achieve push-pull driving in modulation without any external electrical power supply. In addition, by introducing a PIN structure to waveguides, an electric field induced in the antena gap can be applied to a core layer of the waveguide efficiently under the irradiation of MMW signals. The modulator with a 2-element array planar antenna can be driven under an MMW power density of 98 W m −2 . We theoretically discuss designs and characteristics of the MQW, planar antenna, and modulator.

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Section: Introductionmentioning

confidence: 99%

Proposal of InGaAs/InAlAs multiple quantum well Mach–Zehnder modulator integrated with array of planar antennas

Miyazeki

Arakawa

2019

Jpn. J. Appl. Phys.

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“…Mach-Zehnder modulators (MZMs) have been used for precise lightwave control in various fields. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The quality of optical output signals from MZMs closely relates to the optical balance of the MZ interferometers. Using integrated modulators with active trimmers to compensate the optical power balance, we have achieved operations with higher than 60 dB extinction ratio.…”

Section: Introductionmentioning

confidence: 99%

High extinction ratio characteristics of over 60 dB Mach–Zehnder modulator with asymmetric power-splittingY-branches onX-cut Ti:LiNbO₃

Yamaguchi

Nakajima

Kanno

et al. 2014

Jpn. J. Appl. Phys.

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We discuss the performance of Mach-Zehnder modulators with asymmetric power-splitting Y-branches theoretically and confirmed it experimentally. The output characteristics of the modulator depend on the relationship between the power splitting ratios of the front and the back Y-branches. Even if the modulator consists of two asymmetric Y-branches, we can achieve high-extinction-ratio operation, with an additional loss as compared with the ideal case, by tuning the splitting ratio of only one of the two Y-branches. The additional loss, however, is small in many cases because the asymmetry considered here is caused by fabrication errors.

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Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

Fujisawa

Saitoh

2015

IEEE J. Quantum Electron.

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Abstract-Quantum-confined Stark effect (QCSE) of group IV Ge(Sn)/SiGe(Sn) quantum wells (QWs) on Si substrate is analyzed by microscopic many-body theory for mid-infrared Si-based electroabsorption devices. To show the validity of the theory, QCSE of Ge/SiGe QW is investigated and very good agreement between theory and reported measured results is obtained. Next, QCSE of GeSn/SiGeSn QWs is analyzed and the QW design for electroabsorption modulators to obtain large extinction ratio in mid-infrared region is presented. It is shown that compressive and tensile strained well and barrier layers is preferable to obtain large extinction ratio due to its large conduction band offset.Index Terms -Si photonics, GeSn quantum wells, electroabsorption modulators, quantum-confined Stark effect, and many-body theory.

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Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Cited by 5 publications

References 22 publications

Proposal of InGaAs/InAlAs multiple quantum well Mach–Zehnder modulator integrated with array of planar antennas

Proposal of InGaAs/InAlAs multiple quantum well Mach–Zehnder modulator integrated with array of planar antennas

High extinction ratio characteristics of over 60 dB Mach–Zehnder modulator with asymmetric power-splittingY-branches onX-cut Ti:LiNbO₃

Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

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Low-Voltage Mach–Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

Cited by 5 publications

References 22 publications

Proposal of InGaAs/InAlAs multiple quantum well Mach–Zehnder modulator integrated with array of planar antennas

Proposal of InGaAs/InAlAs multiple quantum well Mach–Zehnder modulator integrated with array of planar antennas

High extinction ratio characteristics of over 60 dB Mach–Zehnder modulator with asymmetric power-splittingY-branches onX-cut Ti:LiNbO3

Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

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High extinction ratio characteristics of over 60 dB Mach–Zehnder modulator with asymmetric power-splittingY-branches onX-cut Ti:LiNbO₃