Low-Voltage, High-Brightness Silicon Micro-LEDs for CMOS Photonics

Xue, Jin; Kim, J.; Mestre, A.; Tan, K.M.; Chong, D.Y.R.; Roy, Swarnil; Nong, Hao; Lim, Kenneth Yang Teck; Gray, Dodd; Kramnik, Danielius; Atabaki, Amir H.; Quek, Elgin; Ram, Rajeev J.

doi:10.1109/ted.2021.3085541

Cited by 7 publications

(8 citation statements)

References 12 publications

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“…At 6 mA, the intensity is ✶✻✵ approximately 102 ± 48 mW/cm 2 . Compared with the work on the smallest CMOS emitters, 32 the ✶✻✶ emission area is 2 orders of magnitude smaller and the average intensity is approximately doubled.…”

Section: ✶✺✸mentioning

confidence: 82%

“…The smallest emitter fabricated in CMOS ✸✽ was reported in 2021, and employed vertical pn junctions in an unmodified, open-foundry micro-✸✾ electronic CMOS node. 32 These devices were scaled to an emission size of 4µm diameter and ✹✵ intensity of over 40 mW/cm 2 .…”

Section: ✷✻mentioning

confidence: 99%

“…In our previous work, we have shown that vertical pn junctions with top metal con-✺✷ tact can support high injection current while also lower the device footprint compared to lateral ✺✸ junctions. 32 However, the opaque metal contact leads to significant shadowing if the emission area ✺✹ shrinks to a comparable size.…”

Section: ✹✶mentioning

confidence: 99%

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A sub-wavelength Si LED integrated in a CMOS platform

Xue

et al. 2022

Preprint

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A nanoscale on-chip light source with high intensity is desired for various applications in integrated photonics systems. However, it is challenging to realize such an emitter using materials and fabrication processes compatible with the standard integrated circuit technology. In this letter, we report an electrically driven Si light-emitting diode (LED) with sub-wavelength emission area fabricated in an open-foundry microelectronics CMOS platform. The LED emission spectrum is centered around 1100 nm and the emission area is smaller than 0.14 μm<2>( ≈ 400 nm diameter). This LED has high spatial intensity of > 50 mW/cm<2> which is comparable with the state-of-the-art Si-based emitters with much larger emission areas. Due to sub-wavelength confinement, the emission exhibits a high degree of spatial coherence, which is demonstrated by incorporating the LED into a compact lensless in-line holographic microscope. This centimeter-scale, all-silicon microscope utilizes a single emitter to simultaneously illuminate ≈ 9.5 million pixels of a CMOS imager.

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Section: ✶✺✸mentioning

confidence: 82%

Section: ✷✻mentioning

confidence: 99%

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A sub-wavelength Si LED integrated in a CMOS platform

Xue

et al. 2022

Preprint

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show abstract

“…However, their emitter requires an AFM top contact, which hinders the direct compatibility with CMOS platforms. The smallest emitter fabricated in CMOS was reported in 2021, and employed vertical pn junctions in an unmodified, open-foundry microelectronic CMOS node 32 . These devices were scaled to an emission area of 4 μm diameter and intensity of over 40 mW/cm 2 .…”

mentioning

confidence: 99%

“…Third, the carrier injection structure has to be optimized to support high current while not perturbing light extraction. In our previous work, we have shown that vertical pn junctions with top metal contacts can support high injection current while reducing device footprints compared to lateral junctions 32 . However, the opaque metal contact leads to significant shadowing if the emission area shrinks to a comparable size.…”

mentioning

confidence: 99%

A sub-wavelength Si LED integrated in a CMOS platform

Xue

et al. 2023

Nat Commun

Self Cite

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A nanoscale on-chip light source with high intensity is desired for various applications in integrated photonics systems. However, it is challenging to realize such an emitter using materials and fabrication processes compatible with the standard integrated circuit technology. In this letter, we report an electrically driven Si light-emitting diode with sub-wavelength emission area fabricated in an open-foundry microelectronics complementary metal-oxide-semiconductor platform. The light-emitting diode emission spectrum is centered around 1100 nm and the emission area is smaller than 0.14 μm2 (~$$\varnothing 400$$ ∅ 400 nm). This light-emitting diode has high spatial intensity of >50 mW/cm2 which is comparable with state-of-the-art Si-based emitters with much larger emission areas. Due to sub-wavelength confinement, the emission exhibits a high degree of spatial coherence, which is demonstrated by incorporating the light-emitting diode into a compact lensless in-line holographic microscope. This centimeter-scale, all-silicon microscope utilizes a single emitter to simultaneously illuminate ~9.5 million pixels of a complementary metal-oxide-semiconductor imager.

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Increase the inversion degree in Er-doped MgGa2O4 spinel nanofilms to obtain strong electroluminescence

Guo,

Jin,

et al. 2024

Materials Today Chemistry

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Low-Voltage, High-Brightness Silicon Micro-LEDs for CMOS Photonics

Cited by 7 publications

References 12 publications

A sub-wavelength Si LED integrated in a CMOS platform

A sub-wavelength Si LED integrated in a CMOS platform

A sub-wavelength Si LED integrated in a CMOS platform

Increase the inversion degree in Er-doped MgGa2O4 spinel nanofilms to obtain strong electroluminescence

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