Low-Voltage Domain-Wall LiNbO₃ Memristors

Abstract

Application of conducting ferroelectric domain walls (DW) as functional elements may facilitate development of conceptually new resistive switching devices. In a conventional approach, several orders of magnitude change in resistance can be achieved by controlling the DWs density using super-coercive voltage. However, a deleterious characteristic of this approach is high-energy cost of polarization reversal due to high leakage current. Here, we demonstrate a new approach based on tuning the conductivity of DWs themselves rather than on domain rearrangement. Using LiNbO3 capacitors with graphene, we show that resistance of a device set to a polydomain state can be continuously tuned by application of sub-coercive voltage. The tuning mechanism is based on the reversible transition between the conducting and insulating states of DWs.The developed approach allows an energy-efficient control of resistance without the need for domain structure modification. The developed memristive devices are promising for multi-level memories and neuromorphic computing applications.

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

“…[13][14][15][16][17] However, till now, only HZO-based gate stack 2D NC-FETs can obtain ultralow SS (<10 mV dec −1 ) and quasi-free hysteresis simultaneously. [14] As a ferroelectric materials system with excellent ferroelectric and electro-optic properties, single crystal LiNbO 3 (LNO) has attracted huge attention, [25][26][27][28] which shows the largest spontaneous polarization (50-80 µC cm −2 ) and possesses unique ferroelectric domains direction with only the +c and the −c. Recently, owing to full-fledged preparation of high-quality single crystal LNO thin film by ion-implanted method, the CMOS-compatible LNO integrated system is realized and becomes a promising candidate for future electronic and optical integrated chips.…”

A perspective on conducting domain walls and possibilities for ephemeral electronics

“…The possibilities afforded by controllable "now-you-see-it-now you-don't" mercurial conducting domain wall conduits for new kinds of devices were noted in Siedel et al's seminal work [6], where a proof-of-concept memristor was even explicitly demonstrated: conduction states were varied by writing different numbers of domain wall channels between source and drain electrodes using a conducting AFM tip. More operationally pragmatic domain wall memristors [33][34][35][36], transistors [37] and binary memory bits [38,39] have since been developed and their potential applications are growing (in neuromorphic circuitry, for example).…”

Roadmap for Ferroelectric Domain Wall Nanoelectronics

“…Additionally, through electrical control of the wall length, [ 24 ] wall charge state/conformation, [ 136,137 ] and density, [ 138 ] multi‐level states or the ‘memristor device’ promising much higher storage densities than what can be achieved with just binary logic were demonstrated. In fact, by varying the magnitude of applied electrical pulses, the domain wall density in a two‐terminal capacitor was tuned to achieve ≈100 different states (within two orders of magnitude change in resistance).…”