2015
DOI: 10.14257/ijsh.2015.9.9.05
|View full text |Cite
|
Sign up to set email alerts
|

Low Voltage Complementary Metal Oxide Semiconductor Based Internet of Things Enable Energy Efficient RAM Design on 40nm and 65nm FPGA

Abstract: In this work, we are making Energy Efficient Internet of Things (IoTs) Enable RAM. In order to make it energy efficient, we are using low voltage complementary metal oxide semiconductor (LVCMOS) Standards. We are using the 3 different members of LVCMOS IO standards family at different FGPA (virtex-5 and virtex-6) and searching the most energy efficient among them. We are inserting 128-bit IP address in RAM to make internet of things enable RAM. Finally, we are operating our IOTs Enable RAM with different opera… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(1 citation statement)
references
References 5 publications
0
1
0
Order By: Relevance
“…Whereas, our work is based on thermal scaling. Low Voltage Complementary Metal Oxide Semiconductor is used to make Internet of Things Enable Energy Efficient RAM Design on both 40nm and 65nm FPGA [2]. We are also using LVCMOS18 as a default IO standard on our FPGA.…”
Section: Related Workmentioning
confidence: 99%
“…Whereas, our work is based on thermal scaling. Low Voltage Complementary Metal Oxide Semiconductor is used to make Internet of Things Enable Energy Efficient RAM Design on both 40nm and 65nm FPGA [2]. We are also using LVCMOS18 as a default IO standard on our FPGA.…”
Section: Related Workmentioning
confidence: 99%