Low-voltage CMOS and BiCMOS triode transconductors and integrators with gain-enhanced linearity and output impedance

Wyszynski, A.

doi:10.1049/el:19940185

Cited by 33 publications

(6 citation statements)

References 5 publications

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“…Note that supply voltage of [9] is a bit lower, but power consumption is clearly higher. However, the range of tunability and the magnitude of achieved transconductances are higher in [9]. Linearity results are very similar in both cases.…”

Section: Measurement and Simulation Resultsmentioning

confidence: 98%

“…The most realistic comparison of the presented circuit can be done with [9] and [11], although only simulation results are provided there. Note that supply voltage of [9] is a bit lower, but power consumption is clearly higher.…”

Section: Measurement and Simulation Resultsmentioning

confidence: 99%

“…A load resistance R L = 20 kX has been used. The common mode input voltage V CM and the bias voltage V B must be chosen taking into account the desired g m value (see (9)) and the working conditions of the circuit presented in Sect. 3.…”

Section: Measurement and Simulation Resultsmentioning

confidence: 99%

“…In order to cancel the non-linearity associated to V DS2 , in many topologies the drain-source voltage V DS is kept constant, and the input voltage is applied to the gates in a fully differential topology. The resulting transconductance can be tuned by this constant V DS voltage [4][5][6][7][8][9][10]. The drain-source voltage is often set by feedback structures [4], requiring an increase in the area and the power consumption of the circuit.…”

Section: Introductionmentioning

confidence: 99%

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A novel CMOS triode transconductor based on current division

Algueta-Miguel

Blas

López-Martín

2011

Analog Integr Circ Sig Process

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A compact transconductor based on transistors operating in the triode region is presented. A novel V-I conversion stage made up of current dividers is proposed. The circuit allows tunability by adjusting a dc current and the transconductance is independent of transconductance parameter of the triode transistors. Besides, the circuit is simple because feedback structures to fix source-drain voltages of triode transistors are not needed, saving area and featuring low power consumption. Measurement and simulation results are presented and analyzed for validating the proposed technique.

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Section: Measurement and Simulation Resultsmentioning

confidence: 98%

Section: Measurement and Simulation Resultsmentioning

confidence: 99%

Section: Measurement and Simulation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A novel CMOS triode transconductor based on current division

Algueta-Miguel

Blas

López-Martín

2011

Analog Integr Circ Sig Process

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“…This can be realised in a simple and elegant way in BiCMOS technology by adding a cascode bipolar transistor. In the CMOS technology, it is achieved by a high-gain negative feedback loop, for example, in a regulated-cascode [1], an active-cascode [2] or their various modifications [3 -10]. Unfortunately, the negative feedback reduces bandwidth of the transconductors that can only be compensated at the cost of extra power consumption.…”

Section: Introductionmentioning

confidence: 99%

Highly linear CMOS triode transconductor for VHF applications

Jendernalik

Szczepański

Koziel

2012

IET Circuits Devices Syst.

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A high-speed, fully balanced complementary-symmetry metal-oxide-semiconductor (CMOS) triode transconductor is presented. The proposed approach exploits a pseudo-differential-pair triode configuration with a simple adaptive circuit stabilising the drain-to-source voltages of metal-oxide-semiconductor (MOS) transistors. Since no additional active circuits (apart from the resistors made of the cut-off MOS devices) and no feedback loop are used, linearisation improvement is obtained without compromising bandwidth and power consumption. The non-linearity because of the mobility degradation is also compensated. The transconductance of the proposed transconductor can be up to several times higher than for the classical topologies with no extra power consumption. As an example, the transconductor is used to design sixth-order elliptic band-pass filter in the very-high-frequency (VHF) range, simulated in a 0.35 mm CMOS process (AMS).

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