Low-voltage bulk-driven mixer with on-chip balun

Vorst, Daryl Van; Mirabbasi, Shahriar

doi:10.1109/iscas.2008.4541453

Cited by 15 publications

(2 citation statements)

References 10 publications

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“…Nevertheless, the application of this topology is adequate for transmitter operation, due to a high linearity based on less sensitivity of the bulk transconductance to the input voltage [5]. This effect has been observed in [6] as well and is further clarified in Figs. 2 and 3.…”

Section: Body Effectmentioning

confidence: 79%

Body effect up- and down-conversion mixer circuits for low-voltage ultra-wideband operation

Schmitz

Hampel

Orlob

et al. 2009

Analog Integr Circ Sig Process

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This article presents fully differential up-and down-conversion mixer circuits manufactured in a triple well 45 nm CMOS process for low-voltage Ultra-Wideband transmitter and receiver applications. The proposed circuits both employ the transistor bulk terminal for signal injection. While the down-conversion mixer uses the bulk for switching via threshold voltage modulation, the up-conversion mixer applies the baseband signal to the bulk, thereby implicitly incorporating the back-gate controlled current source of the MOS transistor. Both circuits offer resistive on-chip termination and DC coupled output buffering for measurement purposes. The down-conversion mixer features an input-referred compression point of -13.2 dBm and a maximum conversion gain of 9.4 dB at 2.5 GHz with the 3-dB corner frequency being beyond 10 GHz. The implemented up-conversion mixer offers a maximum conversion gain of -8.8 dB at 5.8 GHz together with an output-referred compression point of -9.7 dBm. The operational bandwidth ranges from 4.5 to 6.7 GHz. Both circuits operate at a low supply voltage of 1.1 V.

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Section: Body Effectmentioning

confidence: 79%

Body effect up- and down-conversion mixer circuits for low-voltage ultra-wideband operation

Schmitz

Hampel

Orlob

et al. 2009

Analog Integr Circ Sig Process

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“…Where V thO is the nominal threshold voltage when V SB = 0, 'Y is a technology parameter, and 2CPf is the surface potential [4]. Fig.1 shows the circuit topology of the conventional body input mixer [3,5,6].…”

Section: Circuit Descriptionmentioning

confidence: 99%

An ultra low-voltage, ultra low-power CMOS mixer using the body effect

Zoka

Kargaran

Nabovati

et al. 2011

2011 IEEE 54th International Midwest Symposium on Circuits and Systems (MWSCAS)

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A fully differential ultra low-voltage, ultra low-power down-conversion mixer is presented in this paper. The mixer is designed using four-terminal MOS transistors. The radio frequency (RF) and local-oscillator signals are applied to the gate and bulk of the devices, respectively. The proposed circuit is designed and simulated in the TSMC 0.18J1m CMOS process, with a 1.9GHz RF signal; the simulation results show that the proposed mixer has a conversion gain of 8dB, HP3 of -10.6dBmand SSB noise figure of 12.7dB. The total power consumption in the 0.5 V supply voltage is 1.32mW.

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