Low-voltage 9T FinFETSRAM cell for low-power applications

Moradi, Farshad; Tohidi, Mohammad

doi:10.1109/socc.2015.7406929

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…The 9T (9Transistor) FINFET SRAM cell mainly includes dual sub-sections [37][38][39][40]. The upper section of 9T SRAM is similar to 6T cell design composed of (XM1, XM2, XM3, XM4, and Q &).…”

Section: Finfet-9t Sram Cellmentioning

confidence: 99%

A Review On Sram Memory Design Using Finfet Technology

Lakshmi¹,

Kamaraju²

2022

Preprint

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An innovative technology named FinFET (Fin Field Effect Transistor) has been developed to offer better transistor circuit design and to balance the necessity of superior storage system (SS). As gate loses control over the channel, CMOS devices face some major issues like increase in manufacturing cost, less reliability and yield, increase of ON current, short channel effects (SCEs), increase in leakage currents etc. However, the memory must have less power dissipation, short access time and low leakage current. The traditional design of SRAM (Static RAM) using CMOS technology represents severe performance degradation due to its higher power dissipation and leakage current. Thus, a Nano-scaled device named FinFET is introduced for designing SRAM since it has three dimensional (3D) design of the gate. FinFET has been used to improve the overall performance, which includes efficiency, power, and area. Moreover, FinFET has been chosen as a transistor of choice because it is not affected by SCEs. In this work, we have reviewed various FinFET based SRAM cells, performance metrics and the comparison over different technologies.

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Section: Finfet-9t Sram Cellmentioning

confidence: 99%

A Review On Sram Memory Design Using Finfet Technology

Lakshmi¹,

Kamaraju²

2022

Preprint

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“…The 8T design is introduced to separate the read operation from write in order to attain improved stability when allowing low-voltage operations (Guler & Jha, 2019;Neelima et al, 2020). The 8T configuration represents that, addition of 2 FETs to a 6T cell offers a read processes which won't • FinFET-9T SRAM cell: The 9T (9Transistor) FINFET SRAM cell mainly includes dual subsections (Moradi & Tohidi, 2015;Oh et al, 2016;Sharma, 2016;Yatimi & Aroudam, 2018).…”

Section: Finfet Based Sram Cellsmentioning

confidence: 99%

A Review on SRAM Memory Design Using FinFET Technology

Lakshmi¹,

Kamaraju²

2022

International Journal of System Dynamics Applications

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An innovative technology named FinFET (Fin Field Effect Transistor) has been developed to offer better transistor circuit design and to compensate the necessity of superior storage system (SS). As gate loses control over the channel, CMOS devices faces some major issues like increase in manufacturing cost, less reliability and yield, increase of ON current, short channel effects (SCEs), increase in leakage currents etc. However, it is necessary for the memory to have less power dissipation, short access time and low leakage current. The traditional design of SRAM (Static RAM) using CMOS technology represents severe performance degradation due to its higher power dissipation and leakage current. Thus, a Nano-scaled device named FinFET is introduced for designing SRAM since it has three dimensional design of the gate. FinFET has been used to improve the overall performance and has been chosen as a transistor of choice because it is not affected by SCEs. In this work, we have reviewed various FinFET based SRAM cells, performance metrics and the comparison over different technologies.

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Full-VDD and near-threshold performance of 8T FinFET SRAM cells

Turi

Delgado-Frias

2017

Integration

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Low-voltage 9T FinFETSRAM cell for low-power applications

Cited by 3 publications

References 16 publications

A Review On Sram Memory Design Using Finfet Technology

A Review On Sram Memory Design Using Finfet Technology

A Review on SRAM Memory Design Using FinFET Technology

Full-VDD and near-threshold performance of 8T FinFET SRAM cells

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