Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers

Liu, C. Y.; Yoon, Soon Fatt; Cao, Qing; Tong, Cunzhu; Li, H. F.

doi:10.1063/1.2434156

Cited by 43 publications

(33 citation statements)

References 19 publications

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“…[38][39][40][41] Several samples with a stack of 4 QD layers with a nominal coverage of 3 ML are grown. The GaAs barrier is varied from 5 up to 50 nm.…”

Section: Figure 3: Pl Spectra Of 3 ML Gasb Qds Grown With a V/iii Ratmentioning

confidence: 99%

Dense lying GaSb quantum dots on GaAs by Stranski-Krastanov growth

Loeber

Hoffmann

Fouckhardt

2011

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII

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GaSb quantum dots (QDs) have been grown epitaxially on GaAs in the Stranski-Krastanov (SK) mode. By variation of the Sb/Ga-V/III flux ratio, the growth temperature, and the nominal coverage the QD dimensions and optoelectronic characteristics can be tuned. These modifications enable dense lying dots with a density up to 9.8 × 10 10 cm -2 . The position of the photoluminescence (PL) peak can be varied between 0.850 and 1.378 µm by precise control of growth parameters. To raise the PL intensity and QD laser output power samples with a stack of GaSb QD layers are grown on GaAs wafer. A GaSb-QD-laser with a 8-fold stack and an emission wavelength around 0.900 µm is realized with a differential quantum efficiency of 54%.

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“…[38][39][40][41] Several samples with a stack of 4 QD layers with a nominal coverage of 3 ML are grown. The GaAs barrier is varied from 5 up to 50 nm.…”

Section: Figure 3: Pl Spectra Of 3 ML Gasb Qds Grown With a V/iii Ratmentioning

confidence: 99%

Dense lying GaSb quantum dots on GaAs by Stranski-Krastanov growth

Loeber

Hoffmann

Fouckhardt

2011

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII

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“…Therefore, the laser with of m exhibits larger than the laser with of m. In term of characteristic temperature, the laser with of m has an almost infinite from C to C and operates up to C, while the laser with of m only operates below C and exhibits relatively lower of 325 K from C to C. This could be explained by the temperature dependent behavior of the current spreading characteristics. The effective current density in the active region is approximated by [11], [13]: (2) where is the total current density in the device, is the width of laser ridge, and is the current spreading length expressed as follows:…”

Section: Introductionmentioning

confidence: 99%

Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers

Wang

Yoon

Zhao

et al. 2011

IEEE Photon. Technol. Lett.

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The characteristic temperature and modal gain of 1.3-m p-doped InAs/GaAs quantum-dot (QD) lasers with different ridge heights have been investigated as a function of injection current under different operation temperatures ranging from 20 C to 120 C. The results show that the geometrical shape of the laser ridge has significant effect on the threshold current density, , and modal gain. The optimum ridge height in the QD laser should be controlled with etch depth where most of the doped layers above the active region are removed.Index Terms-Characteristic temperature ( ), modal gain, p-doping, quantum dot (QD), ridge height.

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“…A significant amount of research has been carried out on the development of high-performance QD lasers, which offer advantages of low threshold current, temperature stability, high modulation bandwidth, and low chirp [1][2][3][4][5][6][7][8][9]. On the other hand, the disadvantage of such devices is the undesired excitedstate lasing caused by the low number of QDs (low surface density) at high currents and high temperatures [2][3][4].…”

Section: Introductionmentioning

confidence: 99%