Low-threshold quantum dot lasers with 201 nm tuning range

Varangis, P.M.; Li, H.; Liu, G.T.; Newell, T.C.; Stintz, A.; Fuchs, B.; Malloy, K.J.; Lester, L. F.

doi:10.1049/el:20001080

Cited by 130 publications

(63 citation statements)

References 4 publications

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“…Considering laser diodes with the same AR coatings, reducing their cavity length from 2 mm to 1.7 mm led to an increase in the free−running loss, enabling access to the more energetic excited states. As long as such an increase in loss does not exceed the saturated gain of the ground state, then it is possible to access both GS and ES and thus extend tunability [41]. This was further demonstrated in [6], whereby the tunability of an external cavity laser was investigated with diode chips of different lengths (1, 2 and 3 mm).…”

Section: Optimization Of Threshold Currentmentioning

confidence: 95%

“…In this context, it is particularly useful to go back to those studies where a comparative investigation was made of several different structures or laser layouts. The first demonstration of a broadly tunable QD laser (201 nm) already provided key insights into the role of chip length and cavity loss in the achievable tunability [41]. Considering laser diodes with the same AR coatings, reducing their cavity length from 2 mm to 1.7 mm led to an increase in the free−running loss, enabling access to the more energetic excited states.…”

Section: Optimization Of Threshold Currentmentioning

confidence: 99%

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Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

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2015

Photonics

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Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0-1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers.

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Section: Optimization Of Threshold Currentmentioning

confidence: 95%

Section: Optimization Of Threshold Currentmentioning

confidence: 99%

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

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2015

Photonics

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“…31 We present here comprehensive experimental and theoretical studies on InP-based TI structures containing InAs quantum dashes (QDashes). These structures substantially differ from typical quantum dots since they are strongly elongated in [1][2][3][4][5][6][7][8][9][10] direction and hence they have a denser ladder of confined states. 32,33 In the considered design, QDashes are immersed in the InGaAlAs matrix, with the GS emission near 1.55 µm at room temperature (RT).…”

mentioning

confidence: 92%

“…lasers. Carefully designed TI structures make possible taking advantage of improved characteristics of a QD-based laser, such as lower threshold current, 1,2 better temperature stability [3][4][5] and wider spectral tunability, 6 while addressing the issue in QD lasers that hinders their performance, i.e. limited modulation rates due to considerable population of hot carriers occupying QD excited states and wetting layer states.…”

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confidence: 99%

Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission

et al. 2017

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We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-0D) tunnel structures containing strongly elongated InAs/InP(001) quantum dots (called quantum dashes), emitting at 1.55 μm. These quantum dashes (QDashes) are separated by a 2.3 nm-width barrier from an InGaAs quantum well (QW), lattice matched to InP. We have tailored quantum-mechanical coupling between the states confined in QDashes and a QW by changing the QW thickness. By combining modulation spectroscopy and photoluminescence excitation, we have determined the energies of all relevant optical transitions in the system and proven the carrier transfer from the QW to the QDashes, which is the fundamental requirement for the tunnel injection scheme. A transformation between 0D and mixed-type 2D-0D character of an electron and a hole confinement in the ground state of the hybrid system have been probed by time-resolved photoluminescence that revealed considerable changes in PL decay time with the QW width changes. The experimental discoveries have been explained by band structure calculations in the framework of the eight-band k⋅p model showing that they are driven by delocalization of the lowest energy hole state. The hole delocalization process from the 0D QDash confinement is unfavorable for optical devices based on such tunnel injection structures.

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“…This concerns a low threshold current [1,2] and high temperature insensitivity [3][4][5]. Due to the large inhomogeneous broadening of QD emission they can also be tuned in a wide range of wavelengths [6]. However, there are still problems that need to be overcome to push the performance characteristics of the QD lasers further, for instance, the existence of the large population of hot carriers occupying QD excited states or wetting layer, which limits the speed of modulation.…”

Section: Introductionmentioning

confidence: 99%

Tunnel injection structures based on InGaAs/GaAs quantum dots: optical properties and energy structure

Rudno‐Rudziński¹,

Andrzejewski²,

Sęk³

et al. 2010

J. Phys.: Conf. Ser.

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Tunnel injection structures based on InGaAs/GaAs quantum dots: optical properties and energy structure Abstract. The limited speed of direct modulation due to the significant population of hot carriers in quantum dots (QD) is a major drawback of the application of QD based lasers in fibre optics telecommunication. One of the most promising methods of alleviating this problem is the design of tunnel injection (TI) structures, where already cold carries are injected by means of tunnelling through a thin barrier from an adjacent quantum well (QW) directly to the QD ground state. We have investigated the properties of TI structures consisting of an In x Ga 1-x As quantum well and a layer of self-assembled In 0.6 Ga 0.4 As/GaAs quantum dots versus the properties a reference QD sample. Photoreflectance spectroscopy is applied to determine the energies of optical transitions in this complex system. The obtained energies are then used to verify the reliability of the calculations in the 8 band kp model, which take into account the realistic geometry of the dots, influence of the strain and the coupling between the dot layer and the injector quantum well. Finally, time resolved photoluminescence (PL) experiment is performed at low temperature and its results are related to the acquired structure of confined levels. The influence of the tunnelling process on PL rise and decay times is explained.

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Low-threshold quantum dot lasers with 201 nm tuning range

Cited by 130 publications

References 4 publications

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission

Tunnel injection structures based on InGaAs/GaAs quantum dots: optical properties and energy structure

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