Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers

Abstract

Continuous wave (cw) operating temperature of 223 K was achieved with molecular beam epitaxy grown separate confinement buried heterostructure (SCBH) PbTe diode lasers with PbEuSeTe electrical and optical confinement layers. This is the highest cw operating temperature reported for midinfrared diode lasers. The active region of the SCBH diode lasers varies laterally to form a crescent-shaped waveguide with a maximum thickness of 0.15 μm and a lateral width of 2 μm. Exceptionally low threshold currents of 102 mA at 200 K, 166 mA at 210 K, and 249 mA at 215 K were measured.

IV-VI Semimagnetic Semiconductors: Recent Developments

“…First, they are good infrared detectors and lasers, which (owing to the use f mixed crystals like Pb1-ySnyΤe) cover the broad range f infrared part f the spectrum f electromagnetic radiation [28,29]. Despite rather low financial funding available for the development f the new infrared optoelectronic devices based on IV-VI semiconductors, the impressive progress has been achieved in heterostructure lasers incorporating semimagnetic materials such as Pb1-xΕux Τe1-y Sey .…”

IV-VI Semimagnetic Semiconductors with Rare Earth Ions

“…The laser with PbTe-PbΕuSeTe heterostructure currently holds the record for the working temperature of the continuous wave operation mid-infrared semiconductor laser (T = 223 K [2]). The layer of IV-VI semiconductor with Εu may serve both as the active layer of the device or as the layer providing electrical and optical confinement [2,3].…”

“…The laser with PbTe-PbΕuSeTe heterostructure currently holds the record for the working temperature of the continuous wave operation mid-infrared semiconductor laser (T = 223 K [2]). The layer of IV-VI semiconductor with Εu may serve both as the active layer of the device or as the layer providing electrical and optical confinement [2,3]. The physical property relevant for the applications of these crystals is the rapid increase in the energy gap with the increasing Εu content (dΕg/dx = (30 _ 50) meV/at.% [4][5][6]).…”

Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy

“…and to cw operation at 223 K. 3 While these devices are usually grown on lead-salt substrates, ͑111͒ oriented BaF 2 has proven to be an excellent alternative as substrate material for lead-salt heterostructures. 4 Although BaF 2 is still considerably lattice-mismatched with respect to most of the lead-salt compounds, it is readily available in high crystalline quality and no significant degradation of epitaxial layers occurs during thermal cycling because of the well matched thermal expansion coefficients.…”